Výsledky vyhledávání - "Boris Ya. Ber"

Hydrogen in natural diamond: Comparison of SIMS and FTIR data

Autor: Felix V. Kaminsky, Boris Ya. Ber, Dmitry Yu. Kazantsev, Galina K. Khachatryan, Svetlana N. Shilobreeva

A set of natural diamonds, representing the main types of physical classification (IaA, IaAB, IaB and IIa), was studied with the utilisation of FTIR and SIMS with the implantation of hydrogen into a standard sample. The volumetric concentrations of h

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1d243107e3395fb9b1fb71c2fa62625d
https://doi.org/10.21203/rs.3.rs-2374587/v1

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Development and Study of the p–i–n GaAs/AlGaAs Tunnel Diodes for Multijunction Converters of High-Power Laser Radiation

Autor: E. V. Kontrosh, Viacheslav M. Andreev, V. S. Yuferev, V. S. Kalinovskii, G. V. Klimko, D. Y. Kazantsev, Stefan Ivanov, Boris Ya. Ber

Publikováno v: Semiconductors. 54:355-361

The creation of connecting tunnel diodes with a peak tunneling-current density higher than the density of the short-circuit current of photoactive p–n junctions is an important task in the development of multijunction photoconverters (III–V) of h

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::55c9fec9bca040717892d3335327f6ed
https://doi.org/10.1134/s1063782620030112

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Aminated Graphene-Graft-Oligo(Glutamic Acid) /Poly(ε-Caprolactone) Composites: Preparation, Characterization and Biological Evaluation

Autor: Olga Solomakha, Evgenia Korzhikova-Vlakh, Grigorii Antonov, Boris Ya. Ber, Aleksey Nashchekin, M. K. Rabchinskii, Mariia Stepanova, Ilia Averianov, Iosif V. Gofman, Aleksey Smirnov, Yuliya Nashchekina

Publikováno v: Polymers
Volume 13
Issue 16
Polymers, Vol 13, Iss 2628, p 2628 (2021)

Biodegradable and biocompatible composites are of great interest as biomedical materials for various regeneration processes such as the regeneration of bones, cartilage and soft tissues. Modification of the filler surface can improve its compatibilit

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::10ab2fee43ae0cbaf557f8b32f63e31b
https://doi.org/10.3390/polym13162628

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Donor-acceptor nature of orange photoluminescence in AlN

Autor: I. A. Aleksandrov, Timur V. Malin, Boris Ya Ber, Dmitrii Yu Kazantsev, Konstantin S. Zhuravlev, D. S. Milakhin

Publikováno v: Semiconductor Science and Technology. 35:125006

Recombination dynamics, photoluminescence and photoluminescence excitation spectra have been investigated for 1.9 eV photoluminescence band in AlN in the temperature range of 5–650 K. The recombination dynamics for the 1.9 eV photoluminescence band

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f6e489ec5c2fafa550a19cdc965f2f2b
https://doi.org/10.1088/1361-6641/abacdd

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Nonlinear effects in low-energy ion sputtering of solids

Autor: Rene Asomoza, Yuriy Kudriavtsev, A. G. Hernandez, Boris Ya. Ber, Dmitry Yu. Kazantsev, Alexander N. Gorokhov

Publikováno v: Journal of Vacuum Science & Technology A. 38:053203

In this paper, we demonstrate that the sputtering of solids by ions of low (

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b51625119df5d2ddb737d46fa3475a3f
https://doi.org/10.1116/6.0000262

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Luminescent and electrical properties of oxygen‐implanted silicon

Autor: Denis V. Danilov, Boris Ya. Ber, Oleg Vyvenko, A. S. Loshachenko, N. A. Sobolev, Dmitrii Kasantsev

Publikováno v: physica status solidi c. 14:1700114

Light emitting diodes with an active defect-rich region produced by oxygen implantation and a subsequent multistep annealing of silicon wafers were investigated by means of transmission electron microscopy, SIMS, capacitance voltage, deep level trans

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::21aea225ff9f3667c6391030cb4cae44
https://doi.org/10.1002/pssc.201700114

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Electrical properties of Mg‐doped GaN and Al x Ga 1–x N

Autor: Boris Ya. Ber, V. N. Jmerik, Nataliya M. Shmidt, A. M. Mizerov, Stefan Ivanov, Dmitry Yu. Kasantsev, T. A. Komissarova

Publikováno v: physica status solidi c. 6

We report on plasma-assisted molecular beam epitaxy (PA MBE) growth of Mg-doped GaN and AlxGa1–xN (x = 0.15 and 0.42) layers on c-sapphire (N-polarity) and studies of their electrical properties as functions of growth temperature, Mg flux and alloy

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::aeb50d668c4893558ae8828ba7ad6d17
https://doi.org/10.1002/pssc.200880939

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Diffusion of Zn in TPV materials: GaSb, InGaSb, InGaAsSb and InAsSbP

Autor: Boris Ya. Ber, Andreas W. Bett, Partha S. Dutta, Oleg V. Sulima, M.G. Mauk

Publikováno v: AIP Conference Proceedings.

This paper reviews recent results of the study of Zn diffusion from the vapor phase in important thermophotovoltaic (TPV) materials such as GaSb‐, InGaAsSb‐, InGaSb‐ and InAsSbP. Peculiarities of Zn diffusion in each of these materials and diff

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a411da3104d7e7231dcf8c159b9b6a95
https://doi.org/10.1063/1.1539395

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Pseudo-closed box diffusion of Zn into InGaAsSb and AlGaSb for TPV devices

Autor: Oleg V. Sulima, Andreas W. Bett, Boris Ya. Ber, Michael G. Mauk, Joseph T. South

Publikováno v: AIP Conference Proceedings.

The first systematic study of Zn diffusion into InGaAsSb and AlGaSb is presented. The diffusion parameters, which provide good control over p-n junction depth, are determined. Anodic oxidation of In0.15Ga0.85As0.17Sb0.83 is investigated. InGaAsSb/GaS

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::dc6e8d0288574ad2f12a3635aefbe987
https://doi.org/10.1063/1.57803

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