Zobrazeno 1 - 10
of 55
pro vyhledávání: '"Boris S. Ryvkin"'
Publikováno v:
IET Optoelectronics, Vol 15, Iss 4, Pp 194-199 (2021)
Abstract It is shown theoretically that a GaAs/AlGaAs laser diode design using an asymmetric waveguide structure and a bulk active layer (AL), located close to the p‐cladding, can provide high output power in a single, broad transverse mode for sho
Externí odkaz:
https://doaj.org/article/0769d86ff487449e95b26936bf99fcde
Autor:
Boris S. Ryvkin, Eugene A. Avrutin
Publikováno v:
Optical and Quantum Electronics. 55
Threshold properties and pulsed output of AlGaInP visible-emitting lasers with an asymmetric waveguide structure and a bulk active layer are analysed. The effects of the current leakage, increased by the heating of the laser due to the proximity of t
Publikováno v:
Electronics Letters, Vol 57, Iss 23, Pp 891-893 (2021)
The experimental characterization of a high‐power pulsed semiconductor laser operating in the eye‐safe spectral range (wavelength around 1.5 μm), with an asymmetric waveguide structure, a 100 μm wide stripe, and a bulk active layer positioned v
Autor:
Eugene A Avrutin, Boris S Ryvkin
Publikováno v:
Semiconductor Science and Technology. 37:125002
A semiconductor laser design for efficient, high power, high brightness red light emission is proposed, using a large optical cavity asymmetric waveguide and a bulk active layer (AL) positioned very close to the p-cladding. The low threshold carrier
Autor:
Eugene A. Avrutin, Boris S. Ryvkin
Publikováno v:
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD).
An effective one-dimensional travelling wave model is used to analyse the performance of a short-cavity asymmetric-waveguide high pulsed power laser diodes. The effect of longitudinal inhomogeneity is proven to be modest for practical laser designs.
Autor:
Lauri Hallman, Jukka Viheriälä, Juha Kostamovaara, Boris S. Ryvkin, Antti T. Aho, Eugene A. Avrutin, Mircea Guina
Publikováno v:
IEEE Photonics Technology Letters. 31:1635-1638
We report first experimental results on a high-power pulsed semiconductor laser operating in the eye-safe spectral range (wavelength around $1.5~\mu \text{m}$ ) with an asymmetric waveguide structure. The laser has a bulk active layer positioned very
Autor:
Sahba Jahromi, Eugene A. Avrutin, Pekka Keranen, Juha Kostamovaara, Boris S. Ryvkin, Jussi-Pekka Jansson
Publikováno v:
Optical Engineering. 60
A laser diode illuminator for single-photon avalanche diode detection-based pulsed time-of-flight 3D range imaging is presented. The illuminator supports a block-based illumination scheme and consists of a 16-element custom-designed common anode quan
Publikováno v:
ICTON
InGaAsP/InP high pulsed power lasers operating in the range of $1.3 - 1.6\ \mu \mathrm{m}$ have been intensely studied recently, with LIDAR technology being the primary application. We present and analyse a design with a bulk active layer which has a
Autor:
Lauri Hallman, Juha Kostamovaara, Jukka Viheriälä, Antti T. Aho, Mircea Guina, Eugene A. Avrutin, Boris S. Ryvkin, Jari Lyytikäinen, Topi Uusitalo
Publikováno v:
2019 IEEE High Power Diode Lasers and Systems Conference (HPD).
We report on the development of high peak power laser diodes emitting in the $1.5 mu mathrm m$ wavelength band for eye-safe LIDAR applications. Different techniques for wavelength locking to and operation with a narrow emission spectrum are discussed
Autor:
Boris S. Ryvkin, Lauri Hallman, Mircea Guina, Eugene A. Avrutin, Antti T. Aho, Juha Kostamovaara, Jukka Viheriälä
Publikováno v:
2019 IEEE High Power Diode Lasers and Systems Conference (HPD).
Design considerations for high pulsed power and brightness 1.5 $\mu$ m laser emitters for laser radar applications, based on comprehensive semi-analytical theory, are presented. A strongly asymmetric waveguide design with a bulk active layer position