Zobrazeno 1 - 10
of 79
pro vyhledávání: '"Boris N. Feigelson"'
Autor:
Alan G. Jacobs, Boris N. Feigelson, Joseph A. Spencer, Marko J. Tadjer, Jennifer K. Hite, Karl D. Hobart, Travis J. Anderson
Publikováno v:
Crystals, Vol 13, Iss 5, p 736 (2023)
Selective area doping via ion implantation is crucial to the implementation of most modern devices and the provision of reasonable device design latitude for optimization. Herein, we report highly effective silicon ion implant activation in GaN via S
Externí odkaz:
https://doaj.org/article/2f1386850e6b4d1c912b5af5261f2d76
Autor:
Alan G. Jacobs, Joseph A. Spencer, Jennifer K. Hite, Karl D. Hobart, Travis J. Anderson, Boris N. Feigelson
Publikováno v:
physica status solidi (a).
Autor:
Scott S. Dossa, Ilya Ponomarev, Boris N. Feigelson, Marc Hainke, Christian Kranert, Jochen Friedrich, Jeffrey J. Derby
Publikováno v:
Journal of Crystal Growth. 609:127150
Autor:
Michael A. Mastro, Yekan Wang, James C. Gallagher, Michael E. Liao, Mona A. Ebrish, Boris N. Feigelson, Karl D. Hobart, Mark S. Goorsky, Jennifer K. Hite, Alan G. Jacobs, Travis J. Anderson
Publikováno v:
Journal of Electronic Materials. 50:4642-4649
In light of the importance of selective area doping in GaN to enable planar process technology, and to avoid the complications from the etch/regrowth process, ion implantation is the recognizable alternative. Annealing to activate dopant species and
Autor:
Mason A. Wolak, Kevin P. Anderson, Alan G. Jacobs, James A. Wollmershauser, Benjamin L. Greenberg, Boris N. Feigelson
Publikováno v:
Chemistry of Materials. 32:10155-10164
Many atomic layer deposition (ALD) reactions are highly exothermic, with some likely releasing hundreds of kJ/mol per cycle. In ALD on conventional substrates (e.g., wafers), this exothermicity is ...
Autor:
James C. Gallagher, Michael A. Mastro, Boris N. Feigelson, Travis J. Anderson, G. M. Foster, Andrew D. Koehler, Alan G. Jacobs, Jennifer K. Hite, Karl D. Hobart, Francis J. Kub
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 32:478-482
We report selective area n-type doping using ion implantation of Si into semi-insulating, C-doped GaN samples activated using both conventional rapid thermal annealing (RTA) and 30 atm N2 overpressure annealing. Implanted regions were tested for Si a
Autor:
Monica S. Allen, Minwoo Jung, Maxim R. Shcherbakov, Melissa Bosch, Ganjigunte R. S. Iyer, Alexander J. Giles, Joshua D. Caldwell, Gennady Shvets, Boris N. Feigelson, Jeffery Allen, Ran Gladstein Gladstone, Simeon Trendafilov, Shourya Dutta-Gupta, Zhiyuan Fan
Publikováno v:
Nanophotonics, Vol 8, Iss 8, Pp 1417-1431 (2019)
A periodic metagate is designed on top of a boron nitride-graphene heterostructure to modulate the local carrier density distribution on the monolayer graphene. This causes the bandgaps of graphene surface plasmon polaritons to emerge because of eith
Autor:
C. M. Roland, Adam P. Holt, James A. Wollmershauser, Daniel Fragiadakis, Boris N. Feigelson, Madhu Tyagi
Publikováno v:
Macromolecules. 52:4139-4144
The physical properties of a polycarbonate (PC) glass formed under high pressure are evaluated experimentally and compared to molecular dynamics simulations of a simple model polymer capable of pre...
Autor:
Charles R. Eddy, Chao Li, Boris N. Feigelson, Yekan Wang, Karl D. Hobart, Marko J. Tadjer, Mark S. Goorsky, Jennifer K. Hite, Michael A. Mastro, Travis J. Anderson, Tingyu Bai
Publikováno v:
ECS Journal of Solid State Science and Technology. 8:P70-P76
Post-implantation damage and defect characterization of multicycle rapid thermal annealing (MRTA) activated Mg+ implanted (0001) GaN on (110) sapphire substrate was investigated using high resolution X-ray scattering and transmission electron microsc
Autor:
James C. Gallagher, Andrew D. Koehler, Lunet E. Luna, Jinqiao Xie, Boris N. Feigelson, Travis J. Anderson, Alan G. Jacobs, Karl D. Hobart
Publikováno v:
Journal of Crystal Growth. 499:35-39
In this work, we evaluate the effect of the novel symmetric multicycle rapid thermal annealing (SMRTA) process on both Mg ion implanted and non-implanted thick unintentionally doped GaN drift layers for vertical power devices. The typical p-type beha