Zobrazeno 1 - 10
of 57
pro vyhledávání: '"Boris Meyler"'
Publikováno v:
Microelectronics Reliability. 79:265-269
Hole trapping was studied in the Al 2 O 3 -SiO 2 (A-O) dielectric stack developed for HV CMOS and nonvolatile memory (NVM) applications. Pt electrode blocked the electron injection from the gate. Holes tunneling from the p-type Si substrate through t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b380f0539a24edea7f364fbae09bc574
https://doi.org/10.1016/j.microrel.2017.05.035
https://doi.org/10.1016/j.microrel.2017.05.035
Autor:
Valentina Zaffino, Stephen J. Pearton, Fan Ren, Jonathan Lee, Shihyun Ahn, Elena Flitsiyan, Michael Antia, Leonid Chernyak, Joseph Salzman, Anupama Yadav, Boris Meyler
Publikováno v:
Radiation Effects and Defects in Solids. 172:250-256
The impact of internal irradiation with secondary Compton electrons, generated by gamma-photons, on the characteristics of III-N/GaN-based devices was explored. N-channel AlGaN/GaN high-electron-mobility transistors (HEMTs) were exposed to gamma-radi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::077f48dd852703f752bef05c9cfb37fe
https://doi.org/10.1080/10420150.2017.1300903
https://doi.org/10.1080/10420150.2017.1300903
Publikováno v:
ECS Journal of Solid State Science and Technology. 6:S3063-S3066
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fb8c614fc243a7ca8afa04645ed356c
https://doi.org/10.1149/2.0191711jss
https://doi.org/10.1149/2.0191711jss
Autor:
Galit Atiya, Vissarion Mikhelashvili, Gadi Eisenstein, Revathy Padmanabhan, Wayne D. Kaplan, Boris Meyler, Ori Eyal, S. Yofis
Publikováno v:
IEEE Transactions on Nanotechnology. 15:492-498
We describe the optical properties of nonvolatile memory cells based on metal–insulator–semiconductor structures with embedded Pt nanoparticles, fabricated by atomic layer deposition. We show the effect of illumination on the static as well as dy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbc8e5d1bc9e34cbd427a747c6fd647b
https://doi.org/10.1109/tnano.2016.2547328
https://doi.org/10.1109/tnano.2016.2547328
Autor:
Jasques Boivin, Sebestian Guay, Sergey Khodorov, Leonid Chernyak, Anupama Yadav, Boris Meyler, Cameron Glasscock, Elena Flitsiyan, Joseph Salzman, Carlo Coppola, Igor Lubomirsky
Publikováno v:
Radiation Effects and Defects in Solids. 171:223-230
The impact of 60Co gamma-irradiation on n-channel AlGaN/GaN high-electron-mobility transistors was studied by means of temperature-dependent electron beam-induced current (EBIC) and cathodoluminescence (CL) techniques. For the doses up to ∼250 Gy,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e3fc2ed4d55c294c3264e5ac9735014
https://doi.org/10.1080/10420150.2016.1170018
https://doi.org/10.1080/10420150.2016.1170018
Autor:
Y. Shneider, M. Lisiansky, Vladimir Uvarov, Valentina Korchnoy, Boris Meyler, S. Yofis, Inna Popov
Publikováno v:
Journal of Vacuum Science & Technology B. 37:011209
A metal–insulator–metal (MIM) capacitor was developed herein with an atomic layer deposition-fabricated hafnia aluminate (HfAlOx) dielectric layer. A preparation flow combining pre- and post-deposition treatment yielded a device with increased ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82671d26d49624d6e088cc2ca913e80f
https://doi.org/10.1116/1.5054848
https://doi.org/10.1116/1.5054848
Tunneling Emitter Bipolar Transistor as a Characterization Tool for Dielectrics and their Interfaces
Autor:
D. Mistele, Vissarion Mikhelashvili, Arkadi Gavrilov, Shimon Cohen, Joseph Salzman, Eilam Yalon, Dan Ritter, Boris Meyler
Publikováno v:
ECS Transactions. 41:325-334
The metal insulator semiconductor and metal insulator metal structures are of interest for transistor technology and resistive switching based memory. We propose the tunneling emitter bipolar transistor as a complementary characterization tool of bot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::345d83f0d6b59a6a8e9f0dcb46488b40
https://doi.org/10.1149/1.3633049
https://doi.org/10.1149/1.3633049
Autor:
Petr Siyushev, Alex Lahav, Jörg Wrachtrup, Joseph Salzman, Igal Bayn, Oliver Benson, Barbara A. Fairchild, Michael Barth, Boris Meyler, Thomas Wolf, Steven Prawer, Rafi Kalish, Fedor Jelezko
Publikováno v:
Diamond and Related Materials. 20:937-943
The realization of photonic crystals (PC) in diamond is of major importance for the entire field of spintronics based on fluorescent centers in diamond. The processing steps for the case of diamond differ from those commonly used, due to the extreme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7c4cb45ac90289a838186d34a31ad8c3
https://doi.org/10.1016/j.diamond.2011.05.002
https://doi.org/10.1016/j.diamond.2011.05.002
Autor:
T. Cohen-Hyams, M. Lisiansky, Y. Salzman, Wayne D. Kaplan, Boris Meyler, Gadi Eisenstein, Vissarion Mikhelashvili, Yakov Roizin, Magnus Garbrecht
Publikováno v:
Microelectronic Engineering. 88:964-968
We demonstrate the possibility to control charge trapping in the memory stacks comprised of metal nanocrystals (NCs) sandwiched between SiO"2 and high-k dielectric films by light irradiation. Non-equilibrium depletion effects in the state of the art
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef26784b13f5ac0ef2ef574c24b0a1bc
https://doi.org/10.1016/j.mee.2010.12.030
https://doi.org/10.1016/j.mee.2010.12.030
Autor:
Vissarion Mikhelashvili, Boris Meyler, Jossef Salzman, Magnus Garbrecht, T. Cohen-Hyams, Wayne Kaplan, Gadi Eisenstein
Publikováno v:
ECS Transactions. 25:465-471
We describe all high-k, nonvolatile metal-insulator-semiconductor memory capacitor with an equivalent oxide thickness of 7.3 nm that makes use of two gold nanocrystal charge storage layers. The device exhibits a large memory hysteresis of about 0.75
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9475726cedcdeb622dc0ca3a01369489
https://doi.org/10.1149/1.3206646
https://doi.org/10.1149/1.3206646