Zobrazeno 1 - 10
of 92
pro vyhledávání: '"Boris M. Epelbaum"'
Autor:
Roland Weingärtner, Tobias Unruh, Stephan Müller, Sven Besendörfer, Ulrich Bläß, Matthias Weisser, Elke Meissner, Boris M. Epelbaum, Thomas Wicht
Publikováno v:
Journal of Applied Crystallography
AlN single crystals grown by physical vapor transport have been analyzed by X-ray methods to evaluate dislocation types, densities and spatial distribution within the crystal. Potential changes of the AlN crystal quality during growth, both within th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a238242efed6f6c3986d65029876b97c
Autor:
Barbara Tautz, Octavian Filip, Matthias Bickermann, Albrecht Winnacker, Paul Heimann, Boris M. Epelbaum
Publikováno v:
physica status solidi c. 9:449-452
The surface of bulk AlN single crystals grown by PVT on Al-polar (0001) seeds is typically constructed from prismatic, pyramidal, and basal plane facets. Simultaneous growth on different facets with different surface kinetics leads to formation of a
Autor:
Elke Wedler, Klaus Thonke, Octavian Filip, Albrecht Winnacker, Martin Feneberg, Paul Heimann, Matthias Bickermann, Benjamin Neuschl, Boris M. Epelbaum
Publikováno v:
Journal of crystal growth 339, 13 (2012). doi:10.1016/j.jcrysgro.2011.11.043
AlN single crystals are grown by physical vapor transport (PVT) in sintered TaC crucibles in the presence of SiC, i.e. by seeding on 6H–SiC or by adding SiC to the AlN source material. Different growth conditions, i.e. growth temperatures T =1900
Autor:
Albrecht Winnacker, Saskia Schimmel, Octavian Filip, Paul Heimann, Matthias Bickermann, Shunro Nagata, Boris M. Epelbaum
Publikováno v:
physica status solidi c. 8:2235-2238
Structural defects in aluminium nitride (AlN) get visible in panchromatic cathodoluminescence (CL) maps as luminescence at 340 nm and 630 nm is locally enhanced. Low-angle grain boundaries (LAGBs) and dislocations can be detected as long as they are
Publikováno v:
Journal of Crystal Growth. 318:427-431
Aluminum nitride (AlN) single crystals, approximately 25 mm in diameter and up to 15 mm thickness, were grown by the physical vapor transport (PVT) method in tungsten crucibles. To study the effect of growth direction and polarity, growth was perform
Publikováno v:
Journal of Crystal Growth. 312:2522-2526
Bulk AlN–SiC mixed single crystals are prepared by sublimation growth employing pure AlN or mixed AlN–SiC sources and 6H-SiC seed crystals. As the growth temperature is increased from 1900 to 2050 °C, using seeds with different off-axis orientat
Autor:
Shunro Nagata, Octavian Filip, Albrecht Winnacker, Paul Heimann, Boris M. Epelbaum, Matthias Bickermann
Publikováno v:
physica status solidi c. 7:21-24
Bulk aluminum nitride (AlN) is a very promising substrate material for UV optoelectronics, and its UV transparency is of high interest for UV devices designed to emit through the substrate. We report on 500 μm thick bulk AlN substrates with plain UV
Publikováno v:
Silicon Carbide. :33-61
Autor:
Albrecht Winnacker, Octavian Filip, Shunro Nagata, Boris M. Epelbaum, Matthias Bickermann, Paul Heimann
Publikováno v:
Materials Science Forum. :983-986
Aluminum nitride (AlN) is a promising substrate material for epitaxy of Al-rich III-nitrides to be employed, e.g., in deep-UV optoelectronic and high-power microwave devices. In this context, preparation of bulk AlN crystals by physical vapor transpo
Autor:
Octavian Filip, Albrecht Winnacker, Matthias Bickermann, Xian Gang Xu, Juan Li, Boris M. Epelbaum
Publikováno v:
Materials Science Forum. :23-26
Results on bulk growth of SiC crystals along rhombohedral [01-1n] directions are presented. 6H- and 4H-crystals were grown on rhombohedral planes, which make angles of about 45o with the (0001) plane. Etching features on three differently oriented pl