Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Boris L. Druz"'
Autor:
Partho S. Goohpattader, Sukant K. Tripathy, Neeraj Dwivedi, Nalam Satyanarayana, Hui R. Tan, Charanjit S. Bhatia, Boris L. Druz, Shreya Kundu, Narasimhan Srinivasan, Reuben J. Yeo, Ehsan Rismani
Publikováno v:
ACS Applied Materials & Interfaces. 6:9376-9385
An ultrathin bilayer overcoat of silicon nitride and carbon (SiNx/C) providing low friction, high wear resistance, and high corrosion resistance is proposed for future generation hard disk media. The 16 Å thick SiNx/C overcoat consists of an atomica
Microstructure of epitaxial AlN layers on sapphire substrates deposited by physical vapor deposition
Publikováno v:
MRS Proceedings. 1492:129-134
Asymmetric (10L) XRD peaks have been employed as a measure of epitaxial quality for aluminum nitride (AlN) nucleation layers (NL) deposited on sapphire substrate. Epitaxial AlN films have been deposited on 2-6” sapphire substrate by reactive sputte
Publikováno v:
ECS Transactions. 45:199-207
Veeco Instruments Inc., Terminal Drive, Plainview, NY, 11803, USA The native and impurity induced point defects in undoped chemi-cal-vapor deposited diamond, high-purity semi-insulating SiC and grown by molecular beam epitaxy GaN were investigated by
Autor:
A. Yu. Mityagin, Boris L. Druz, Y. Yervtukchov, I. Zaritsky, A.I. Rukovishnikov, V.I. Polyakov
Publikováno v:
Diamond and Related Materials. 15:1926-1929
The influence of the adsorbed impurity molecules onto energy spectrum of electronic states of the DLC films deposited on SiO 2 /Si substrates by direct ion beam from hydrocarbon IC plasma was studied by charge-based deep level transient spectroscopy
Publikováno v:
Diamond and Related Materials. 14:1508-1516
The deposition system described for sub-30 A and thicker carbon (ta-C) overcoat that includes two RF ion beam guns and Filtered Cathodic Arc (FCA) module mounted on a single vacuum chamber. The system is capable of flattening the Thin Film Magnetic H
Autor:
Bela Shanina, S.P. Kolesnik, A. A. Konchits, Yu Gromovoy, Boris L. Druz, I. Zaritskiy, M. Valakh, Y. Yevtukhov, I.B. Yanchuk
Publikováno v:
Diamond and Related Materials. 13:1592-1602
Tetrahedral diamond-like carbon (ta-C) films and hydrogenated a-C:H films were deposited onto Si substrates using filtered cathodic vacuum arc (FCVA) process and direct ion beam deposition from CH4/C2H4 plasma, respectively. Stress of deposited films
Autor:
S. R. Das, Marcel Boudreau, Hari Hegde, Ivo Agatic, Isaac Zaritsky, Adrian J. Devasahayam, Boris L. Druz, Tao Yin, Sylvain LaFramboise, Robert Mallard
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 20:1135-1140
High quality, dense films of SiO2, Al2O3, Ta2O5, and TiO2 were deposited with an ion beam deposition system (IBD). IBD has significant advantages over other techniques in terms of directionality, stress control, repeatability, thermal stability, and
Autor:
I. Zaritskiy, Boris L. Druz, Yu. V. Pleskov, M. D. Krotova, V.I. Polyakov, A. V. Khomich, A.I. Rukovishnikov
Publikováno v:
Journal of Electroanalytical Chemistry. 519:60-64
Electrochemical impedance in H2SO4 solutions and the kinetics of redox reactions in the Fe(CN)63−/4− system were studied in amorphous nitrogenated diamond-like carbon thin-film electrodes. The films were fabricated on p- and i-type silicon and qu
Autor:
Narasimhan Srinivasan, Partho S. Goohpattader, Nalam Satyanarayana, Neeraj Dwivedi, Sukant K. Tripathy, Ehsan Rismani-Yazdi, Boris L. Druz, Reuben J. Yeo, Charanjit S. Bhatia
Publikováno v:
Scientific Reports
Filtered cathodic vacuum arc (FCVA) processed carbon films are being considered as a promising protective media overcoat material for future hard disk drives (HDDs). However, at ultrathin film levels, FCVA-deposited carbon films show a dramatic chang
Publikováno v:
Diamond and Related Materials. 10:931-936
Diamond-like carbon (DLC) films were deposited on Si substrates using highly reproducible direct ion beam deposition from a RF inductively coupled hydrocarbon plasma source. Combinations of gases, such as C 2 H 4 and C 2 H 4 -CH 4 , were used to form