Zobrazeno 1 - 10
of 75
pro vyhledávání: '"Boris Hudec"'
Autor:
Peter Šichman, Roman Stoklas, Stanislav Hasenöhrl, Dagmar Gregušová, Milan Ťapajna, Boris Hudec, Štefan Haščík, Tamotsu Hashizume, Aleš Chvála, Alexander Šatka, Ján Kuzmík
Publikováno v:
physica status solidi (a).
Autor:
Hsin-Hui Huang, Ming-Hung Wu, Tuo-Hung Hou, Che-Chia Chang, Po-Tsun Liu, Boris Hudec, I-Ting Wang, Chih-Cheng Chang
Publikováno v:
IEEE Transactions on Electron Devices. 68:6082-6086
The fault devices induced by device breakdown (BD) are unavoidable due to defect formation during fabrication or along with device cycling stress. The BD cells not only deteriorate device yield, but they also introduce sneak current and result in cel
Autor:
Matej Horsky, Peter Nadazdy, Edmund Dobrocka, Dagmar Gregusova, Alena Seifertova, Jan Derer, Jan Fedor, Tomas Scepka, Boris Hudec
Publikováno v:
2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM).
Publikováno v:
2022 22nd International Scientific Conference on Electric Power Engineering (EPE).
Autor:
Ming-Hung Wu, Boris Hudec, Tuo-Hung Hou, Che-Chia Chang, Hsin-Hui Huang, Chih-Cheng Chang, Po-Tsun Liu
Publikováno v:
IEEE Transactions on Electron Devices. 67:5497-5504
Cell-to-cell interference due to the sneak current is a known and important issue in high-density 4F2 crossbar arrays. However, the interference between normal cells and high-leakage breakdown (BD) cells is rarely discussed. We show that such interfe
Background Endometrial cancers are among the epithelial malignancies of the lining in the uterine cavity. The invasion of carcinoma into the lymphovascular space (LVSI – lymphovascular space invasion) is considered a risk factor for the course of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d759f1519f24afd33bf8e1a67da19f4f
https://doi.org/10.21203/rs.3.rs-1555435/v1
https://doi.org/10.21203/rs.3.rs-1555435/v1
Publikováno v:
Electronics Letters. 56:594-597
The authors present a unique application of analogue oxide-based resistive memory (OxRAM) device for sensor-level information storage and computation. They show that quality of low-contrast images in low-light can be improved by carefully exploiting
Publikováno v:
IEEE Transactions on Electron Devices. 67:1348-1352
In this brief, we present a semi-empirical RC -circuit-based compact model for non-filamentary bi-layer oxide-based random access memory (OxRAM) devices. The proposed RC model captures both dc and pulse behaviors of the OxRAM devices. Additionally, t
Autor:
Hong-Yu Chen, Stefano Brivio, Che-Chia Chang, Jacopo Frascaroli, Tuo-Hung Hou, Boris Hudec, Ming Liu, Hangbing Lv, Gabriel Molas, Joon Sohn, Sabina Spiga, V. Mani Teja, Elisa Vianello, H.-S. Philip Wong
Publikováno v:
Electronic Materials: Science & Technology ISBN: 9783030424237
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66bc546a31965a731cdd52a8ddbfac06
https://doi.org/10.1007/978-3-030-42424-4_3
https://doi.org/10.1007/978-3-030-42424-4_3
Enhanced Performance of LiFePO4 Cathodes Protected By Atomic Layer Deposited Ultrathin Alumina Films
Autor:
Prangya P. Sahoo, Martin Kemeny, Boris Hudec, Miroslav Mikolasek, Matej Mičušík, Peter Siffalovic, Andrea Strakova Fedorkova, Karol Frohlich
Publikováno v:
ECS Meeting Abstracts. :306-306
The LiFePO4 (LFP) cathode has a theoretical specific capacity of 170 mAh/g. This material is stable, safe, and environmentally benign. Li-ion batteries with LFP cathodes have a long cycle life with excellent charging/discharging performance. In our c