Zobrazeno 1 - 10
of 234
pro vyhledávání: '"Borini, S."'
Autor:
Piatti, E., Galasso, S., Tortello, M., Nair, J. R., Gerbaldi, C., Daghero, D., Bruna, M., Borini, S., Gonnelli, R. S.
Publikováno v:
E. Piatti et al., Carrier mobility and scattering lifetime in electric double-layer gated few-layer graphene, Appl. Surf. Sci. 395, 37 (2017)
We fabricate electric double-layer field-effect transistor (EDL-FET) devices on mechanically exfoliated few-layer graphene. We exploit the large capacitance of a polymeric electrolyte to study the transport properties of three, four and five-layer sa
Externí odkaz:
http://arxiv.org/abs/1701.02701
Publikováno v:
The European Physical Journal B 75 (2), 127 132 (2010)
In the present work we report about the investigation of the conduction mechanism of sp2 carbon micro-channels buried in single crystal diamond. The structures are fabricated with a novel technique which employs a MeV focused ion-beam to damage diamo
Externí odkaz:
http://arxiv.org/abs/1608.07405
Autor:
Sassi, U., Parret, R., Nanot, S., Bruna, M., Borini, S., Milana, S., De Fazio, D., Zhuang, Z., Lidorikis, E., Koppens, F. H. L., Ferrari, A. C., Colli, A.
Publikováno v:
Nature Communications 8, 14311 (2017)
Graphene is ideally suited for photonic and optoelectronic applications, with a variety of photodetectors (PDs) in the visible, near-infrared (NIR), and THz reported to date, as well as thermal detectors in the mid-infrared (MIR). Here, we present a
Externí odkaz:
http://arxiv.org/abs/1608.00569
Autor:
Gonnelli, R. S., Paolucci, F., Piatti, E., Sharda, Kanudha, Sola, A., Tortello, M., Nair, Jijeesh R., Gerbaldi, C., Bruna, M., Borini, S.
Publikováno v:
Scientific Reports 5 : 9554 (2015)
The temperature dependence of electric transport properties of single-layer and few-layer graphene at large charge doping is of great interest both for the study of the scattering processes dominating the conductivity at different temperatures and in
Externí odkaz:
http://arxiv.org/abs/1503.01495
Autor:
Monticone, D. Gatto, Quercioli, F., Mercatelli, R., Soria, S., Borini, S., Poli, T., Vannoni, M., Vittone, E., Olivero, P.
Publikováno v:
Physical Review B 88, 155201 (2013)
We report on the systematic characterization of photoluminescence (PL) lifetimes in NV- and NV0 centers in 2 MeV H+ implanted type Ib diamond samples by means of a time correlated single photon counting (TCSPC) microscopy technique. A dipole-dipole r
Externí odkaz:
http://arxiv.org/abs/1309.4870
Autor:
Bruna, M., Borini, S.
Publikováno v:
Phys. Rev. B 81, 125421 (2010)
An experimental study of Raman scattering in N-layer graphene as a function of the top layer doping is reported. At high doping level, achieved by a CHF_3 plasma treatment, we observe a splitting of the $G$ band in the spectra of bilayer and 4-layer
Externí odkaz:
http://arxiv.org/abs/1002.4942
Autor:
Scidà, A., Haque, S., Treossi, E., Robinson, A., Smerzi, S., Ravesi, S., Borini, S., Palermo, V.
Publikováno v:
In Materials Today April 2018 21(3):223-230
Publikováno v:
In Chemical Physics Letters 2008 451(1):141-146
Publikováno v:
In Physica E: Low-dimensional Systems and Nanostructures 2007 38(1):197-199
Publikováno v:
In Surface Science 2007 601(1):58-62