Low-stress Si3N4 waveguides on sapphire substrate: (Student paper)

Autor: Wang, K., Berenschot, E.J.W., Dijkstra, M., Tiggelaar, R.M., Martinussen, S.M., Chang, L., Hendriks, W.A.P.M., Borgelink, B.T.H., Frentrop, R.N., García Blanco, S.M., Tas, N.R., Tkachuk, V.V.

Publikováno v: ECIO 2022: 23rd European Conference on Integrated Optics: 4th May-6th May, Milan, Italy, 54-56
STARTPAGE=54;ENDPAGE=56;TITLE=ECIO 2022: 23rd European Conference on Integrated Optics

In this work, we present a new platform, Si3N4-on-sapphire, in which 1.35 μm thick Si3N4 layers can be deposited in a single low pressure chemical vapor deposition (LPCVD) step with very low residual tensile stress (

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::c79df5cc10dc7e1d9d73e5de177a3e0c
https://research.utwente.nl/en/publications/c9bb0f1e-0748-4d77-85b7-46234acf591f

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