Zobrazeno 1 - 10
of 115
pro vyhledávání: '"Borge Vinter"'
Autor:
Emmanuel Rosencher, Borge Vinter
Optoelectronics, first published in 2002, is a practical and self-contained graduate-level textbook on the subject, which will be of great value to both advanced engineering students and practising engineers. Sophisticated concepts are introduced in
Autor:
Borge Vinter, Jean-Yves Duboz
Publikováno v:
Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, In press
Journal of Applied Physics, American Institute of Physics, 2019, 126 (17), pp.174501. ⟨10.1063/1.5111194⟩
Journal of Applied Physics, American Institute of Physics, In press
Journal of Applied Physics, American Institute of Physics, 2019, 126 (17), pp.174501. ⟨10.1063/1.5111194⟩
In tunnel junctions, an electron current is transformed into a hole current via a quantum tunnel effect through the semiconductor bandgap. We derive a complete theory for the current through tunnel junctions based on Kane's approach and extended to t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::978a97e3e1b5442256d77f60d8fa981e
https://hal.archives-ouvertes.fr/hal-02324074
https://hal.archives-ouvertes.fr/hal-02324074
Autor:
Julen Tamayo-Arriola, Denis Lefebvre, François H. Julien, Yvon Cordier, Borge Vinter, Maxime Hugues, Miguel Montes Bajo, Adrian Hierro, Jean-Michel Chauveau, N. Le Biavan, Arnaud Jollivet
Publikováno v:
Applied Physics Letters
We have developed a method to grow and characterize the state of the art non-polar ZnO/(Zn,Mg)O multi-quantum wells on m-plane ZnO substrates as a prerequisite for applications based on intersubband transitions. The epilayer interfaces exhibit a low
Autor:
Borge Vinter, Julien Brault, A. Kahouli, Benjamin Damilano, Mathieu Leroux, Jean Massies, Sébastien Chenot
Publikováno v:
Journal of Crystal Growth. 363:282-286
Taking advantage of the strain-induced 2-dimensional (2D)–3D “Stransky–Krastanov type” growth mode of GaN on Al x Ga 1− x N, we report on the fabrication of ultraviolet (UV) light emitting diodes (LEDs) using GaN quantum dots (QDs) as emitt
Autor:
M. Laügt, Borge Vinter, M. Teisseire, Christian Morhain, Christiane Deparis, Jesús Zúñiga-Pérez, Jean-Michel Chauveau
Publikováno v:
Microelectronics Journal. 40:512-516
Zinc oxide (ZnO) has recently attracted considerable attention because of its unique physical properties and its potential applications in the blue and UV spectral range. Up to now, ZnO-based heterostructures have mostly been grown in a c-orientation
Autor:
Jesús Zúñiga-Pérez, M. Laügt, Christian Morhain, Christiane Deparis, M. Teisseire, Philippe Vennéguès, Borge Vinter, Jean-Michel Chauveau
Publikováno v:
Scopus-Elsevier
Zinc Oxide (ZnO) has recently attracted considerable attention because of its potential applications in the blue and the UV spectral range. To now, (Zn,Mg)O/ZnO heterostructures have been grown in a c-orientation. The growth of non-polar layers along
Autor:
B. Lo, Borge Vinter, M. Laügt, D.A. Buell, Christian Morhain, Jean-Michel Chauveau, Gérard Neu, Philippe Vennéguès, M. Tesseire-Doninelli
Publikováno v:
Applied Physics A. 88:65-69
Non polar ZnO and (Zn, Co)O layers were successfully grown on (1102) sapphire (R-plane sapphire). The growth process was shown to directly influence the surface morphology as well as the strain state in (1120) ZnO (A-plane ZnO). The dominant defect l
Autor:
D.A. Buell, S. Berard-Bergery, Christian Morhain, M. Teisseire-Doninelli, B. Lo, Borge Vinter, M. Laügt, Philippe Vennéguès, Jean-Michel Chauveau, Christiane Deparis
Publikováno v:
Journal of Crystal Growth. :366-369
Zinc oxide (ZnO) has recently attracted considerable attention because of its unique physical properties and its potential applications in the blue and UV spectral range. Up to now, ZnO-based heterostructures have mostly been grown in a c-orientation
Autor:
Samuel Matta, Yong-Hoon Cho, Benjamin Damilano, M. Korytov, D. El Maghraoui, Borge Vinter, Sihem Jaziri, Julien Brault, Mathieu Leroux, Je-Hyung Kim
Publikováno v:
2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO).
This work deals with the luminescence properties of Al0.5Ga0.5N/GaN quantum dots grown by molecular beam epitaxy on c-plane sapphire. The low temperature PL bands are shifted below the GaN gap by the Stark effect. An approximate model, based on dot h
Autor:
Adrian Hierro, E. Muñoz, Borge Vinter, A. Kurtz, G. Tabares, Jean-Michel Chauveau, Manuel Lopez-Ponce
Publikováno v:
Oxide-based Materials and Devices VI.
We review in this paper the application of ZnO/(Zn,Mg)O quantum wells to the photodetection of the polarization state of UV light. This photodetection is achieved by using the natural anisotropy that exists in non-polar ZnO/(Zn,Mg)O quantum wells, wh