Zobrazeno 1 - 10
of 49
pro vyhledávání: '"Boran Fan"'
Autor:
Slavko Mocevic, Jianghui Yu, Boran Fan, Keyao Sun, Yue Xu, Joshua Stewart, Yu Rong, He Song, Vladimir Mitrovic, Ning Yan, Jun Wang, Igor Cvetkovic, Rolando Burgos, Dushan Boroyevich, Christina DiMarino, Dong Dong, Jayesh Kumar Motwani, Richard Zhang
Publikováno v:
iEnergy, Vol 1, Iss 1, Pp 100-113 (2022)
Simultaneously imposed challenges of high-voltage insulation, high dv/dt, high-switching frequency, fast protection, and thermal management associated with the adoption of 10 kV SiC MOSFET, often pose nearly insurmountable barriers to potential users
Externí odkaz:
https://doaj.org/article/e440710a0de64d5abc907d334d7d94a6
Publikováno v:
IEEE Transactions on Power Electronics. 38:5603-5608
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::367caca24ccf0d8498c590d206f3dff2
https://doi.org/10.1109/tpel.2022.3231583
https://doi.org/10.1109/tpel.2022.3231583
Autor:
Yu Rong, Zhiyu Shen, Jun Wang, Jianghui Yu, Boran Fan, Slavko Mocevic, Dushan Boroyevich, Rolando Burgos
Publikováno v:
IEEE Journal of Emerging and Selected Topics in Power Electronics. 11:1827-1837
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bb594c96443b5225111c3a791bfbe4e
https://doi.org/10.1109/jestpe.2022.3219353
https://doi.org/10.1109/jestpe.2022.3219353
Autor:
Yuliang Cao, Yijie Bai, Vladimir Mitrovic, Boran Fan, Dong Dong, Rolando Burgos, Dushan Boroyevich, Radha Krishna Moorthy, Madhu Chinthavali
Publikováno v:
IEEE Transactions on Power Electronics. :1-18
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e12d1f2afda148f10a770b8e0ce36add
https://doi.org/10.1109/tpel.2023.3279987
https://doi.org/10.1109/tpel.2023.3279987
Publikováno v:
IEEE Transactions on Power Electronics. 37:2525-2530
Modular multilevel converters (MMC) with the conventional control are subjected to large capacitor voltage ripples, especially at low-line-frequencies. The existing attenuation approaches such as the second order or high-frequency harmonic injections
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9381da0caf9537ac0858df2cc3678870
https://doi.org/10.1109/tpel.2021.3116803
https://doi.org/10.1109/tpel.2021.3116803
Publikováno v:
2023 IEEE Applied Power Electronics Conference and Exposition (APEC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d112fb326837509c42bd164fe0ec1a32
https://doi.org/10.1109/apec43580.2023.10131331
https://doi.org/10.1109/apec43580.2023.10131331
Publikováno v:
2023 IEEE Applied Power Electronics Conference and Exposition (APEC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::daff2cbf888038bed88fb14573316294
https://doi.org/10.1109/apec43580.2023.10131325
https://doi.org/10.1109/apec43580.2023.10131325
Autor:
Junming Liang, Boran Fan, Chewei Chang, Rolando Burgos, Dong Dong, Jagadeesh Tangudu, Suman Dwari
Publikováno v:
2023 IEEE Applied Power Electronics Conference and Exposition (APEC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a72d1ff0abd565af2353ac029dc2e19
https://doi.org/10.1109/apec43580.2023.10131311
https://doi.org/10.1109/apec43580.2023.10131311
Autor:
Warren Chen, Mahmoud El Chamie, Rolando Burgos, Dushan Boroyevich, Boran Fan, Victoria Baker, Vladimir Blasko
Publikováno v:
IEEE Transactions on Power Electronics. 36:13383-13388
Common-source inductance (CSI) is proven to be detrimental for high-speed switching. It can significantly slow down switching speed and increase switching losses. Recent research also demonstrated a self-turn- on phenomenon during the device turn- of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f78f61c031eba42972cb670fd859fcc1
https://doi.org/10.1109/tpel.2021.3080615
https://doi.org/10.1109/tpel.2021.3080615
Autor:
Vladimir Blasko, Boran Fan, Dushan Boroyevich, Rolando Burgos, Louelson A. Costa, Warren Chen
Publikováno v:
IEEE Transactions on Industry Applications. 57:6145-6154
Matrix converters feature low switching loss, small electromagnetic interference filter, and potential for achieving high power density. With the employment of wide-bandgap devices, such as silicon carbide devices, the converter performance can be fu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53c74a363ef4a03be87c406b287542c2
https://doi.org/10.1109/tia.2021.3105374
https://doi.org/10.1109/tia.2021.3105374