Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Bor-Yen Mao"'
Publikováno v:
Journal of the Chinese Institute of Engineers. 1:49-58
An investigation was carried out to determine the precipitation behavior and strengthening effect in various thermomechanical treatments of Al‐Zn‐Mg alloys containing high Zn and low Mg contents. The results show that the precipitation behavior i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2fac6e955391792cecea4b31a443c9b
https://doi.org/10.1080/02533839.1978.9676598
https://doi.org/10.1080/02533839.1978.9676598
Publikováno v:
IEEE Transactions on Nuclear Science. 34:1692-1697
Total dose characteristics of the buried insulator in implanted silicon-on-insulator (SOI) substrates have been studied using MOS transistors. The threshold voltage shift of the parasitic back channel transistor, which is controlled by charge trappin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2764858e6478ed35181eabf1396eb3d
https://doi.org/10.1109/tns.1987.4337538
https://doi.org/10.1109/tns.1987.4337538
Publikováno v:
IEEE Electron Device Letters. 8:306-308
The effects of post-oxygen-implant annealing temperature on the characteristics of MOSFET's in oxygen-implanted silicon-on-insulator (SOI) substrates are studied. The results show significant improvements in the electron and hole mobilities near the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9d7a44c5c7c11bb336980df2b3423d6
https://doi.org/10.1109/edl.1987.26640
https://doi.org/10.1109/edl.1987.26640
Autor:
Bor‐Yen Mao, Peng‐Heng Chang
Publikováno v:
Applied Physics Letters. 50:152-154
The structure of silicon‐on‐insulator formed by oxygen implantation at 150 keV with a dose of 1.6×1018 cm−2 is studied by high resolution transmission electron microscopy. Polyhedral oxygen precipitates are observed both in the top Si layer an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::828005db8b81b656281e2a5367478ef7
https://doi.org/10.1063/1.97645
https://doi.org/10.1063/1.97645
Publikováno v:
IEEE Electron Device Letters; 1987, Vol. 8 Issue 7, p306-308, 3p
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Conference
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.