Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Bor-Chau Juang"'
Autor:
Y. J. Ma, Y. G. Zhang, Y. Gu, S. P. Xi, X. Y. Chen, Baolai Liang, Bor-Chau Juang, Diana L. Huffaker, B. Du, X. M. Shao, J. X. Fang
Publikováno v:
AIP Advances, Vol 7, Iss 7, Pp 075117-075117-10 (2017)
We report structural properties as well as electrical and optical behaviors of beryllium (Be)-doped InGaAsP lattice-matched to InP grown by gas source molecular beam epitaxy. P type layers present a high degree of compensation on the order of 1018 cm
Externí odkaz:
https://doaj.org/article/3100c2e524f543ff9e2a220c93942c86
Autor:
Bor-Chau Juang, Baolai Liang, Dingkun Ren, David L. Prout, Arion F. Chatziioannou, Diana L. Huffaker
Publikováno v:
Crystals, Vol 7, Iss 10, p 313 (2017)
III-(As, Sb) alloys are building blocks for various advanced optoelectronic devices, but the growth of their ternary or quaternary materials are commonly limited by spontaneous formation of clusters and phase separations during alloying. Recently, di
Externí odkaz:
https://doaj.org/article/1f4ae416b9d549a7a056ae37884819ba
Autor:
Arion F. Chatziioannou, Y. Ji, Diana L. Huffaker, Bor-Chau Juang, Khalifa M. Azizur-Rahman, David L. Prout, B. Liang, T. Chang
Publikováno v:
Electronics Letters. 56:1420-1423
The suppression of leakage current via surface passivation plays a critical role for GaSb‐based optoelectronic devices. In this Letter the authors carefully optimise the sulfur passivation parameters for improving the performance of GaSb p–i–n
Autor:
Benjamin S. Williams, Alan C. Farrell, Khalifa M. Azizur-Rahman, Siddharth Somasundaram, Dingkun Ren, Diana L. Huffaker, Mohammad Shahili, Bor-Chau Juang, Zixuan Rong
Publikováno v:
Nano Letters. 19:2793-2802
Developing uncooled photodetectors at midwavelength infrared (MWIR) is critical for various applications including remote sensing, heat seeking, spectroscopy, and more. In this study, we demonstrate room-temperature operation of nanowire-based photod
Publikováno v:
Journal of Applied Physics. 131:075703
Autor:
Debnath, Mukul C., Baolai Liang, Laghumavarapu, Ramesh B., Guodong Wang, Das, Aparna, Bor-Chau Juang, Huffaker, Diana L.
Publikováno v:
Journal of Applied Physics; 2017, Vol. 121 Issue 21, p1-8, 8p, 7 Graphs
Autor:
Dingkun, Ren, Khalifa M, Azizur-Rahman, Zixuan, Rong, Bor-Chau, Juang, Siddharth, Somasundaram, Mohammad, Shahili, Alan C, Farrell, Benjamin S, Williams, Diana L, Huffaker
Publikováno v:
Nano letters. 19(5)
Developing uncooled photodetectors at midwavelength infrared (MWIR) is critical for various applications including remote sensing, heat seeking, spectroscopy, and more. In this study, we demonstrate room-temperature operation of nanowire-based photod
Autor:
Andrew Hudson, Bor-Chau Juang, Michael A. Slocum, William T. Lotshaw, Baolai Liang, Adam C. Scofield, Diana L. Huffaker, M. C. Debnath, Seth M. Hubbard
Publikováno v:
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)
As part of a study on radiation effects in optoelectronic materials, we exposed a series of AIGaAs/GaAs double heterostructures grown by molecular beam epitaxy and metalorganic chemical vapor deposition to electron and proton radiation. The active re
Autor:
George T. Nelson, Bor-Chau Juang, Michael Slocum, Zachary Bittner, Ramesh B. Lagumavarapu, Diana Huffaker, Seth Hubbard
Publikováno v:
IEEE 44th Photovoltaic Specialist Conference (PVSC)
The GaAs/GaSb interface misfit design can achieve comparable efficiency to conventional inverted metamorphic multijunction cells at up to 30% cost reduction. In this pre-liminary work, GaSb single junctions were grown via molecular beam epitaxy on bo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::af3462c26fbd9e9121b830cab323090a
https://orca.cardiff.ac.uk/id/eprint/112953/1/GN_APL_v28.pdf
https://orca.cardiff.ac.uk/id/eprint/112953/1/GN_APL_v28.pdf
Autor:
Baolai Liang, Bor-Chau Juang, Arion F. Chatziioannou, Diana L. Huffaker, Dingkun Ren, David L. Prout
Publikováno v:
Crystals, Vol 7, Iss 10, p 313 (2017)
Crystals; Volume 7; Issue 10; Pages: 313
Crystals; Volume 7; Issue 10; Pages: 313
III-(As, Sb) alloys are building blocks for various advanced optoelectronic devices, but the growth of their ternary or quaternary materials are commonly limited by spontaneous formation of clusters and phase separations during alloying. Recently, di