Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Boon-Siew Ooi"'
Autor:
Yuan Mao, Islam Ashry, Mohd Sharizal Alias, Tien Khee Ng, Frode Hveding, Muhammad Arsalan, Boon Siew Ooi
Publikováno v:
IEEE Photonics Journal, Vol 11, Iss 5, Pp 1-10 (2019)
We experimentally investigated the performance of a distributed acoustic sensor (DAS) designed using a few-mode fiber (FMF), when launching different spatial modes under intentional index perturbation within the fiber. Our demonstration showed that t
Externí odkaz:
https://doaj.org/article/572d8fe0a5554b8a90d02e78881b4489
Autor:
Juan Manuel Marin Mosquera, Islam Ashry, Abderrahmen Trichili, Chun Hong Kang, Omar Alkhazragi, Tien Khee Ng, Boon Siew Ooi
Publikováno v:
Photonic Instrumentation Engineering X.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1323e5b449054439d6c272b0177c8f9f
https://doi.org/10.1117/12.2649910
https://doi.org/10.1117/12.2649910
Publikováno v:
IEEE Journal of Quantum Electronics. 45:1168-1176
This paper presents a theoretical model to explain the quasi-supercontinuum interband emission from InGaAs/GaAs self-assembled semiconductor quantum dot lasers by accounting for both inhomogeneous and homogeneous optical gain broadening. The experime
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91aec69f7ade76c055a295256da00bb4
https://doi.org/10.1109/jqe.2009.2020055
https://doi.org/10.1109/jqe.2009.2020055
Autor:
Dong-Ning Wang, Hery S. Djie, C.E. Dimas, Gerard Dang, James C. M. Hwang, Boon-Siew Ooi, W. Chang
Publikováno v:
IEEE Sensors Journal. 7:251-257
We report on the design and fabrication of a novel wideband superluminescent diode (SLD) based on InGaAs/GaAs quantum-dot structure. In this device, we monolithically integrate a photon absorber section to suppress lasing action and optical feedback
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcc8e80c9412f8598673a858db2448c9
https://doi.org/10.1109/jsen.2006.886884
https://doi.org/10.1109/jsen.2006.886884
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 8:870-879
In this paper, we present the attractive characteristics of low-energy ion-implantation-induced quantum-well intermixing of InP-based heterostructures. We demonstrate that this method can fulfil a list of requirements related to the fabrication of co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eeca34fdb828a932b715ab899a9fa9a3
https://doi.org/10.1109/jstqe.2002.800846
https://doi.org/10.1109/jstqe.2002.800846
Publikováno v:
IEEE Photonics Technology Letters. 21:694-696
The temporal coherence functions of InGaAs-GaAs quantum-dot (QD) and InAs-InGaAlAs quantum-dash (Qdash) superluminescent diodes (SLDs) and broadband laser diodes (BLDs) are reported. Using an optical fiber-based spectral interferometer, the fabricate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::438265d35be72028b97714bdea4b88d3
https://doi.org/10.1109/lpt.2009.2016575
https://doi.org/10.1109/lpt.2009.2016575
Publikováno v:
MRS Proceedings. 891
We report the intermixing enhancement using the Ge-doped sol-gel derived silica encapsulant layer in InGaAs/InGaAsP quantum-well laser structure. A bandgap shift of ∼64 nm has been observed from 16% Ge-doped silica capped sample at an annealing tem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1584add072400647048f25c35dd8230
https://doi.org/10.1557/proc-0891-ee03-11
https://doi.org/10.1557/proc-0891-ee03-11
Publikováno v:
(CLEO). Conference on Lasers and Electro-Optics, 2005..
We demonstrate the fabrication of ultra-short absorptive sections in strongly confined waveguide employing quantum well intermixing technique, which could lead to the realization of nanoscale waveguides with selective saturable area for nonlinear opt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b4951299854692a7a379458c1387bf1
https://doi.org/10.1109/cleo.2005.201945
https://doi.org/10.1109/cleo.2005.201945
Publikováno v:
Proceedings of SPIE; 3/30/2017, Vol. 10313, p190-192, 3p
Publikováno v:
Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics; Nov/Dec2015, Vol. 33 Issue 6, p06F701-1-06F701-7, 7p