Zobrazeno 1 - 10
of 83
pro vyhledávání: '"Boon Teik Chan"'
Autor:
Hsiao-Hsuan Liu, Shairfe M. Salahuddin, Boon Teik Chan, Pieter Schuddinck, Yang Xiang, Geert Hellings, Pieter Weckx, Julien Ryckaert, Francky Catthoor
Publikováno v:
IEEE Transactions on Electron Devices. 70:883-890
Autor:
Hsiao-Hsuan Liu, Shairfe Muhammad . Salahuddin, Boon Teik Chan, Pieter Schuddinck, Yang Xiang, Pieter Weckx, Geert Hellings, Francky Catthoor
Publikováno v:
DTCO and Computational Patterning II.
Autor:
Naoto Horiguchi, Basoene Briggs, Boon Teik Chan, Steven Demuynck, Maryam Hosseini, Geert Mannaert, Hans Mertens, Yusuke Oniki, Sujith Subramanian, Zheng Tao
Publikováno v:
Advanced Etch Technology and Process Integration for Nanopatterning XI.
Autor:
Dunja Radisic, Anabela Veloso, Anshul Gupta, Maryam Hosseini, Shouhua Wang, Hans Mertens, Boon Teik Chan, Dmitry Batuk, Gerardo Tadeo Martinez Alanis, Frédéric Lazzarino, Eugenio Dentoni Litta, Naoto Horiguchi
Publikováno v:
Advanced Etch Technology and Process Integration for Nanopatterning XI.
Autor:
Anshul Gupta, Zheng Tao, Dunja Radisic, Hans Mertens, Olalla Varela Pedreira, Steven Demuynck, Juergen Boemmels, Katia Devriendt, Nancy Heylen, Shouhua Wang, Karine Kenis, Lieve Teugels, Farid Sebaai, Christophe Lorant, Nicolas Jourdan, Boon Teik Chan, Sujith Subramanian, Filip Schleicher, Antony Peter, Nouredine Rassoul, Yong Kong Siew, Basoene Briggs, Dasiy Zhou, Erik Rosseel, Elena Capogreco, Geert Mannaert, Alfonso Sepúlveda Márquez, Emmanuel Dupuy, Kevin Vandersmissen, Bilal Chehab, Gayle Murdoch, Efrain Altamirano-Sánchez, Serge Biesemans, Zsolt Tokei, Eugenio Dentoni Litta, Naoto Horiguchi
Publikováno v:
Advanced Etch Technology and Process Integration for Nanopatterning XI.
Autor:
Harold Dekkers, Frank Holsteyns, Lars-Ake Ragnarsson, Naoto Horiguchi, Boon Teik Chan, Hideaki Iino, Yusuke Oniki, Daire J. Cott, Efrain Altamirano Sanchez, Toby Hopf, Farid Sebaai, Eugenio Dentoni Litta
Publikováno v:
Solid State Phenomena. 314:119-126
This paper addresses challenges and solutions of replacement metal gate of gate-all-around nanosheet devices. The unit process and integration solutions for the metal gate patterning as well as interface dipole patterning to offer multiple threshold
Autor:
S. Paolillo, Guillaume Boccardi, N. Jourdan, Manoj Jaysankar, Zheng Tao, Sylvain Baudot, Geert Mannaert, Juergen Boemmels, T. Hopf, E. Capogreco, Shouhua Wang, Efrain Altamirano, E. Dupuy, Olalla Varela Pedreira, B. Briggs, Thomas Chiarella, Joris Cousserier, Sofie Mertens, Romain Ritzenthaler, Frank Holsteyns, C. Lorant, Goutham Arutchelvan, Ingrid Demonie, Steven Demuynck, K. Kenis, Xiuju Zhou, Anshul Gupta, F. Sebai, D. Radisic, Zsolt Tokei, Erik Rosseel, A. Sepulveda, Naoto Horiguchi, Christel Drijbooms, Antony Premkumar Peter, Haroen Debruyn, Nouredine Rassoul, Bilal Chehab, P. Morin, Boon Teik Chan, Christopher J. Wilson, Katia Devriendt, Noemie Bontemps, Frederic Lazzarino, Paola Favia, Lieve Teugels, D. Yakimets, F. Schleicher, Houman Zahedmanesh, Jerome Mitard, Min-Soo Kim, An De Keersgieter, Sujith Subramanian, Kevin Vandersmissen, Hans Mertens, Eugenio Dentoni Litta, Yong Kong Siew
Publikováno v:
IEEE Transactions on Electron Devices. 67:5349-5354
Buried power rail (BPR) is a key scaling booster for CMOS extension beyond the 5-nm node. This work demonstrates, for the first time, the integration of tungsten (W) BPR lines with Si finFETs. BPR technology requires insertion of metal in the front-e
Autor:
Stefan Kubicek, Marc Heyns, Fahd A. Mohiyaddin, Boon Teik Chan, Roy Li, George Simion, Iuliana Radu, Bogdan Govoreanu, Nard Dumoulin Stuyck, J. Jussot
Publikováno v:
IEEE Electron Device Letters. 41:1253-1256
Recent advances demonstrated the feasibility of realizing spin-based quantum computation in Silicon. To make further progress towards a large-scale implementation of spin-based quantum device technologies, a reliable fabrication process with good yie
Publikováno v:
The Journal of Physical Chemistry C. 124:7163-7173
Area-selective deposition (ASD) is a promising bottom-up manufacturing solution for catalysts and nanoelectronic devices. However, industrial applications are limited as highly selective ASD proces...
Autor:
Stefan Kubicek, N. I. Dumoulin Stuyck, Y. Canvel, Laurent Souriau, Bogdan Govoreanu, M. Shehata, Clément Godfrin, Iuliana Radu, Danny Wan, Rohith Acharya, George Simion, R. Li, Jeroen Verjauw, Bertrand Parvais, S. Narasimhamoorthy, Antoine Pacco, Ts. Ivanov, Boon Teik Chan, S. Van Winckel, Massimo Mongillo, Steven Brebels, Sebastien Couet, A. Grill, A. Potocnik, J. Jussot, Fahd A. Mohiyaddin, A. Elsayed, Jan Craninckx, X. Piao
Publikováno v:
Scopus-Elsevier
VLSI Circuits
VLSI Circuits
Building quantum computers requires not only a large number of qubits with high fidelity and low variability, but also a large amount of analog and digital components to drive the qubits. Larger arrays of solid-state qubits with high fidelity and low
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::718648348332c1b5f373ceaa17a51108
https://hdl.handle.net/20.500.14017/59d65559-85f8-47bf-8752-574c58dc6fd5
https://hdl.handle.net/20.500.14017/59d65559-85f8-47bf-8752-574c58dc6fd5