Zobrazeno 1 - 10
of 2 112
pro vyhledávání: '"Boon, S"'
Autor:
Zhou, Jie, Zhang, Qiming, Gong, Jiarui, Lu, Yi, Liu, Yang, Abbasi, Haris, Qiu, Haining, Kim, Jisoo, Lin, Wei, Kim, Donghyeok, Li, Yiran, Ng, Tien Khee, Jang, Hokyung, Liu, Dong, Wang, Haiyan, Ooi, Boon S., Ma, Zhenqiang
Semiconductor heterojunctions are foundational to many advanced electronic and optoelectronic devices. However, achieving high-quality, lattice-mismatched interfaces remains challenging, limiting both scalability and device performance. Semiconductor
Externí odkaz:
http://arxiv.org/abs/2411.09713
Autor:
Zhou, Jie, Wang, Yifan, Yao, Ziqian, Wang, Qingxiao, Banda, Yara S., Gong, Jiarui, Liu, Yang, Adamo, Carolina, Marshall, Patrick, Lu, Yi, Tsai, Tsung-Han, Li, Yiran, Gambin, Vincent, Ng, Tien Khee, Ooi, Boon S., Ma, Zhenqiang
We report the fabrication and characteristics of GaAs/Si p+/n+ heterojunction tunnel diodes. These diodes were fabricated via grafting the freestanding single-crystalline p-type degenerately doped GaAs (4E19 cm-3) nanomembrane (NM) onto single-crysta
Externí odkaz:
http://arxiv.org/abs/2409.15789
Autor:
Gong, Jiarui, Zhou, Jie, Dheenan, Ashok, Sheikhi, Moheb, Alema, Fikadu, Ng, Tien Khee, Pasayat, Shubhra S., Gan, Qiaoqiang, Osinsky, Andrei, Gambin, Vincent, Gupta, Chirag, Rajan, Siddharth, Ooi, Boon S., Ma, Zhenqiang
Beta-phase gallium oxide ($\beta$-Ga$_2$O$_3$) research has gained accelerated pace due to its superiorly large bandgap and commercial availability of large-diameter native substrates. However, the high acceptor activation energy obstructs the develo
Externí odkaz:
http://arxiv.org/abs/2312.00771
Autor:
Zhou, Jie, Sheikhi, Moheb, Dheenan, Ashok, Abbasi, Haris, Gong, Jiarui, Liu, Yang, Adamo, Carolina, Marshall, Patrick, Wriedt, Nathan, Cheung, Clincy, Qiu, Shuoyang, Ng, Tien Khee, Gan, Qiaoqiang, Gambin, Vincent, Ooi, Boon S., Rajan, Siddharth, Ma, Zhenqiang
In this work, we report the fabrication and characterizations of a monocrystalline GaAs/$\beta$-Ga$_2$O$_3$ p-n heterojunction by employing semiconductor grafting technology. The heterojunction was created by lifting off and transfer printing a p-typ
Externí odkaz:
http://arxiv.org/abs/2310.03886
Autor:
Xin Liu, Danhao Wang, Wei Chen, Yang Kang, Shi Fang, Yuanmin Luo, Dongyang Luo, Huabin Yu, Haochen Zhang, Kun Liang, Lan Fu, Boon S. Ooi, Sheng Liu, Haiding Sun
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-12 (2024)
Abstract Optoelectronic synapses, leveraging the integration of classic photo-electric effect with synaptic plasticity, are emerging as building blocks for artificial vision and photonic neuromorphic computing. However, the fundamental working princi
Externí odkaz:
https://doaj.org/article/b58a972fa10a4ccda8ab8df9a28c616d
Autor:
Zhou, Jie, Dheenan, Ashok, Gong, Jiarui, Adamo, Carolina, Marshall, Patrick, Sheikhi, Moheb, Tsai, Tsung-Han, Wriedt, Nathan, Cheung, Clincy, Qiu, Shuoyang, Ng, Tien Khee, Gan, Qiaoqiang, Vincent, Gambin, Ooi, Boon S., Rajan, Siddharth, Ma, Zhenqiang
Beta phase gallium oxides, an ultrawide-bandgap semiconductor, has great potential for future power and RF electronics applications but faces challenges in bipolar device applications due to the lack of p-type dopants. In this work, we demonstrate mo
Externí odkaz:
http://arxiv.org/abs/2308.06575
We develop a finite volume method for Maxwell's equations in materials whose electromagnetic properties vary in space and time. We investigate both conservative and non-conservative numerical formulations. High-order methods accurately resolve fine s
Externí odkaz:
http://arxiv.org/abs/2307.11842
The Metaverse is a digital world that offers an immersive virtual experience. However, the Metaverse applications are bandwidth-hungry and delay-sensitive that require ultrahigh data rates, ultra-low latency, and hyper-intensive computation. To cater
Externí odkaz:
http://arxiv.org/abs/2306.12822
Autor:
Jose Ilton De Oliveira Filho, Abderrahmen Trichili, Omar Alkhazragi, Mohamed-Slim Alouini, Boon S. Ooi, Khaled Nabil Salama
Publikováno v:
Light: Science & Applications, Vol 13, Iss 1, Pp 1-12 (2024)
Abstract Simultaneous lightwave information and power transfer (SLIPT), co-existing with optical wireless communication, holds an enormous potential to provide continuous charging to remote Internet of Things (IoT) devices while ensuring connectivity
Externí odkaz:
https://doaj.org/article/236a91bfc39b4ae39aef9398cbb87f77
Autor:
Kwang Jae Lee, Yeong Jae Kim, Jung‐Hong Min, Chun Hong Kang, Ram Chandra Subedi, Huafan Zhang, Latifah Al‐Maghrabi, Kwangwook Park, Dante Ahn, Yusin Pak, Tien Khee Ng, Young Min Song, Boon S. Ooi, Osman M. Bakr, Jungwook Min
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 10, Pp n/a-n/a (2024)
Abstract When implementing optoelectronic devices through the stacking of heterogeneous materials, considering the bandgap offset is crucial for achieving efficient carrier dynamics. In this study, the bandgap offset characteristics are investigated
Externí odkaz:
https://doaj.org/article/a49d0ad7c515454198e86d4f07c93c31