Thermal catalytic etching of diamond by double-metal layers

Autor: Tran, D.D., Mannequin, C., Bonvalot, M., Traoré, A., Mariette, H., Sasaki, M., Gheeraert, E.

Publikováno v: In Diamond & Related Materials May 2024 145

Combined spectroscopic ellipsometry and attenuated total reflection analyses of Al 2O 3/HfO 2 nanolaminates

Autor: Bonvalot, M., Kahn, M., Vallée, C., Gourvest, E., Abed, H., Jorel, C., Dubourdieu, C.

Publikováno v: In Thin Solid Films 2010 518(18):5057-5060

Plasma ALD strategies for area selective deposition

Autor: Vallee, C., Bonvalot, M., Gonon, P., Bsiesy, A., Pelissier, B., Chevolleau, T., Yeghoyan, T., Jaffal, M., Belahcen, S., Vallat, R., Chacker, A., Pisi, Y., Zakhtser, A., Pesce, V., Lefèvreand , G., Salicio, O., Gassilloud, R., Possémé, N.

Publikováno v: 73rd Gaseous Electronics Conference GEC 2020
73rd Gaseous Electronics Conference GEC 2020, 2020, virtuelle, United States

International audience; The scaling of transistor is still on the road only thanks to the introduction of complex multiple patterning steps that are more and more expensive and time consuming. Therefore, microelectronic industry needs new solutions a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::980b8cf64df8dfb673acfc38c33abcb6
https://hal.univ-grenoble-alpes.fr/hal-03449640

In line and ex situ metrology and characterization to enable Area Selective Deposition

Autor: Vallee, C., Bonvalot, M., Pelissier, B., jean-herve tortai, David, S., Belahcen, S., Pesce, V., Jaffal, M., Bsiesy, A., Gassilloud, R., Posseme, N., Grehl, T., Brüner, P., Uedono, A.

Publikováno v: AVS 66th International Symposium 2019
AVS 66th International Symposium 2019, Oct 2019, Colombus (USA), United States
HAL

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::d5350773db3e8e8e916a8143e71a68bd
https://hal.univ-grenoble-alpes.fr/hal-02338893

Single batch strategies for the development of an Area Selective Deposition process with the deposition/etch approach

Autor: Vallee, C., Bonvalot, M., Gassilloud, R., Pesce, V., Chaker, A., Belahcen, S., Posseme, N., Pelissier, B., Gonon, P., Bsiesy, A.

Publikováno v: 19th International Conference on Atomic layer Deposition (ALD2019)
19th International Conference on Atomic layer Deposition (ALD2019), Jul 2019, Bellevue (USA), United States

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::c12ab952f78d1b8a72c80e7f59e53e93
https://hal.univ-grenoble-alpes.fr/hal-02338983