Sunlight stability of organic light-emitting diodes.

Autor: Heil, H., Andress, G., Schmechel, R., von Seggern, H., Steiger, J., Bonrad, K., Sprengard, R.

Publikováno v: Journal of Applied Physics; 6/15/2005, Vol. 97 Issue 12, p124501, 4p, 6 Graphs

Low-picomolar, label-free procalcitonin analytical detection with an electrolyte-gated organic field-effect transistor based electronic immunosensor.

Autor: Seshadri P; Dipartimento di Chimica - Università degli Studi di Bari 'A. Moro', via Orabona, 4, 70125 Bari, Italy., Manoli K; Dipartimento di Chimica - Università degli Studi di Bari 'A. Moro', via Orabona, 4, 70125 Bari, Italy., Schneiderhan-Marra N; Natural and Medical Sciences Institute (NMI) at the University of Tuebingen, Markwiesenstr 55, 72770 Reutlingen, Germany., Anthes U; Merck KGaA, Frankfurter Str 250, 64271 Darmstadt, Germany., Wierzchowiec P; Merck KGaA, Frankfurter Str 250, 64271 Darmstadt, Germany., Bonrad K; Merck KGaA, Frankfurter Str 250, 64271 Darmstadt, Germany., Di Franco C; CNR - Istituto di Fotonica e Nanotecnologie, Sede di Bari, Italy., Torsi L; Dipartimento di Chimica - Università degli Studi di Bari 'A. Moro', via Orabona, 4, 70125 Bari, Italy; The Faculty of Science and Engineering, Åbo Akademi University, Biskopsgatan 8 Åbo 20500, Turku, Finland. Electronic address: luisa.torsi@uniba.it.

Publikováno v: Biosensors & bioelectronics [Biosens Bioelectron] 2018 May 01; Vol. 104, pp. 113-119. Date of Electronic Publication: 2017 Dec 26.

Inverse I-V Injection Characteristics of ZnO Nanoparticle-Based Diodes.

Autor: Mundt P; Electronic Materials Group, Technische Universität Darmstadt Institute of Materials and Geo Sciences , Alarich-Weiss-Strasse 2, Darmstadt, Germany.; MerckLab TU-Darmstadt , Darmstadt, Germany., Vogel S; Advanced Thin Film Technology, Institute of Materials Science , Alarich-Weiss-Strasse 2, Darmstadt, Germany., Bonrad K; MerckLab TU-Darmstadt , Darmstadt, Germany.; Merck KGaA , Darmstadt, Germany., von Seggern H; Electronic Materials Group, Technische Universität Darmstadt Institute of Materials and Geo Sciences , Alarich-Weiss-Strasse 2, Darmstadt, Germany.

Publikováno v: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2016 Aug 10; Vol. 8 (31), pp. 20168-75. Date of Electronic Publication: 2016 Aug 01.

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High mobility indium zinc oxide thin film field-effect transistors by semiconductor layer engineering.

Autor: Walker DE; Technical University of Darmstadt, Department of Materials Science, 64287 Darmstadt, Germany. walker@e-mat.tu-darmstadt.de, Major M, Yazdi MB, Klyszcz A, Haeming M, Bonrad K, Melzer C, Donner W, von Seggern H

Publikováno v: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2012 Dec; Vol. 4 (12), pp. 6835-41. Date of Electronic Publication: 2012 Nov 30.