Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Bonnie A. Sheriff"'
Autor:
Jason M. Spruell, Bonnie A. Sheriff, Dorota I. Rozkiewicz, William R. Dichtel, Rosemary D. Rohde, David N. Reinhoudt, J. Fraser Stoddart, James R. Heath
Publikováno v:
Angewandte Chemie. 120:10075-10080
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::285ca4da7e627ad96c639a4ca51303b6
https://doi.org/10.1002/ange.200803480
https://doi.org/10.1002/ange.200803480
Publikováno v:
ACS Nano. 2:1789-1798
Complementary symmetry (CS) Boolean logic utilizes both p- and n-type field-effect transistors (FETs) so that an input logic voltage signal will turn one or more p- or n-type FETs on, while turning an equal number of n- or p-type FETs off. The voltag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::880b8c53e86e331969f72117bb336828
https://doi.org/10.1021/nn800025q
https://doi.org/10.1021/nn800025q
Autor:
J. Fraser Stoddart, Rosemary D. Rohde, James R. Heath, Jason M. Spruell, Bonnie A. Sheriff, Dorota I. Rozkiewicz, William R. Dichtel, David N. Reinhoudt
Publikováno v:
Angewandte Chemie (international edition), 47(51), 9927-9932. Wiley
Here, we investigate four different chemical pathways (Scheme 1a–d) relevant to the Cu-catalyzed azide–alkyne cycloaddition (CuAAC) reaction.[13] Three of those pathways lead to surfaces functionalized with organic molecules.[5, 11, 14] At the ou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9834a768592654c3b6ebfda6b7a17545
https://doi.org/10.1002/anie.200803480
https://doi.org/10.1002/anie.200803480
Publikováno v:
Small. 2:1153-1158
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d78e5f516d34f968443398d0e913ea6b
https://doi.org/10.1002/smll.200600249
https://doi.org/10.1002/smll.200600249
Publikováno v:
Nano Letters. 6:1096-1100
Statistical numbers of field-effect transistors (FETs) were fabricated from a circuit of 17-nm-wide, 34-nm-pitch Si nanowires boron doped at a level of 10(18) cm-3. Top-gated 4-microm-wide Si nanowire p-FETs yielded low off-currents (approximately 10
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::42d532892f74af572d17da297f746a7a
https://doi.org/10.1021/nl052558g
https://doi.org/10.1021/nl052558g
Autor:
Stephanie Hammond, Jill E. Headrick, Bonnie A. Sheriff, Matt Armstrong, Justin Cratty, Cindy L. Berrie
Publikováno v:
Langmuir. 21:4117-4122
Self-assembled monolayers (SAMs) of 1-alkenes on hydrogen-passivated silicon substrates were successfully patterned on the nanometer scale using an atomic force microscope (AFM) probe tip. Nanoshaving experiments on alkyl monolayers formed on H-Si(11
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::54808202a3c764286f59bf2dee18da85
https://doi.org/10.1021/la0481905
https://doi.org/10.1021/la0481905
Autor:
Jang Wook Choi, Erica DeIonno, J. Fraser Stoddart, Yi Luo, Hsian-Rong Tseng, James R. Heath, Akram Boukai, Jonathan Green, Ke Xu, Bonnie A. Sheriff, Yuri Bunimovich, Ezekiel Johnston-Halperin, Young Shik Shin
The primary metric for gauging progress in the various semiconductor integrated circuit technologies is the spacing, or pitch, between the most closely spaced wires within a dynamic random access memory (DRAM) circuit. Modern DRAM circuits have 140 n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9b9f62ee3b8187ea979fcbd29e786b64
https://resolver.caltech.edu/CaltechAUTHORS:20150318-084609166
https://resolver.caltech.edu/CaltechAUTHORS:20150318-084609166
Autor:
Yuri Bunimovich, Jonathan Green, Wei-Li Wu, William M. Tong, Akram Boukai, Zhaoning Yu, R. Stanley Williams, James R. Heath, Zhiyong Li, Ezekiel Johnston-Halperin, Gun Young Jung, Bonnie A. Sheriff, Shih-Yuan Wang
Publikováno v:
Nano letters. 6(3)
High density metal cross bars at 17 nm half-pitch were fabricated by nanoimprint lithography. Utilizing the superlattice nanowire pattern transfer technique, a 300-layer GaAs/AlGaAs superlattice was employed to produce an array of 150 Si nanowires (1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::68f5a6bf00e9b4ea46cc854137b6f4d2
https://pubmed.ncbi.nlm.nih.gov/16522021
https://pubmed.ncbi.nlm.nih.gov/16522021
Autor:
Yuri Bunimovich, R.A. Beckman, Akram Boukai, Johnny Green, James R. Heath, Bonnie A. Sheriff, Kris Beverly, Ezekiel Johnston-Halperin, Erica DeIonno, J. Fraser Stoddart, Jang Wook Choi, Yi Luo
We describe our research into building integrated molecular electronics circuitry for a diverse set of functions, and with a focus on the fundamental scientific issues that surround this project. In particular, we discuss experiments aimed at underst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::86825fc28d73388d1c071a8c3dd904f7
https://resolver.caltech.edu/CaltechAUTHORS:BECfd06
https://resolver.caltech.edu/CaltechAUTHORS:BECfd06
Autor:
Mandy Petz, Kevin T. Sprott, Donald A. Probst, Jutta Wanner, Bonnie A. Sheriff, Kevin W. C. Poon, Andrew M. Harned, Paul R. Hanson
Publikováno v:
Phosphorus, Sulfur, and Silicon and the Related Elements. 177:1971-1972
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2ccc0ed9e74a2cea6b1785b7a15f51a
https://doi.org/10.1080/10426500213332
https://doi.org/10.1080/10426500213332