Zobrazeno 1 - 10
of 96
pro vyhledávání: '"Bongmook Lee"'
Autor:
Tianshi Liu, Hua Zhang, Sundar Babu Isukapati, Emran Ashik, Adam J. Morgan, Bongmook Lee, Woongje Sung, Ayman Fayed, Marvin H. White, Anant K. Agarwal
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 129-138 (2022)
Silicon carbide (SiC) power integrated circuit (IC) technology allows monolithic integration of 600V lateral SiC power MOSFETs and low-voltage SiC CMOS devices. It enables application-specific SiC ICs with high power output and work under harsh (high
Externí odkaz:
https://doaj.org/article/da1ff765b0fc44b8a3a07ceecf6d277a
Autor:
Yilu Zhou, Farzad Mohaddes, Courtney Lee, Smriti Rao, Amanda C. Mills, Adam C. Curry, Bongmook Lee, Veena Misra
Publikováno v:
IEEE Sensors Journal. 22:18970-18977
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88cb5030cf4acb9464a03530fc79728e
https://doi.org/10.1109/jsen.2022.3197060
https://doi.org/10.1109/jsen.2022.3197060
Autor:
Hua Zhang, Tianshi Liu, Utsav Gupta, Sundar Babu Isukapati, Emran Ashik, Adam J. Morgan, Bongmook Lee, Woongje Sung, Anant K. Agarwal, Ayman Fayed
Publikováno v:
2022 IEEE 65th International Midwest Symposium on Circuits and Systems (MWSCAS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf18c5af209d33e3d0f5f5cf333018c3
https://doi.org/10.1109/mwscas54063.2022.9859305
https://doi.org/10.1109/mwscas54063.2022.9859305
Autor:
Emran K Ashik, Sundar B Isukapati, Hua Zhang, Tianshi Liu, Utsav Gupta, Adam J Morgan, Veena Misra, Woongje Sung, Ayman Fayed, Anant K. Agarwal, Bongmook Lee
Publikováno v:
2022 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::070f6eac0d77daabb9ef2617fb8dcaa6
https://doi.org/10.1109/irps48227.2022.9764565
https://doi.org/10.1109/irps48227.2022.9764565
Publikováno v:
IEEE Transactions on Electron Devices. 67:881-887
Typically GaN metal-oxide-semiconductor heterojunction-field-effect transistors (MOS-HFETs) have used two separate dielectrics for the gate and access regions. However, as this article shows, with proper gate-stack engineering, a unified dielectric s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5805ddca594468449b6da79715566637
https://doi.org/10.1109/ted.2020.2969394
https://doi.org/10.1109/ted.2020.2969394
Autor:
Sundar Babu Isukapati, Adam J Morgan, Woongje Sung, Hua Zhang, Tianshi Liu, Ayman Fayed, Anant K. Agarwal, Emran Ashik, Bongmook Lee
Publikováno v:
2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0c861e94cce2692135940238c6aea5f
https://doi.org/10.1109/wipda49284.2021.9645134
https://doi.org/10.1109/wipda49284.2021.9645134
Autor:
Tahmid Latif, James Dieffenderfer, Akhilesh Tanneeru, Bongmook Lee, Veena Misra, Alper Bozkurt
Publikováno v:
2021 IEEE Sensors.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54b67cc1d61b8721beb48672ff9c9e81
https://doi.org/10.1109/sensors47087.2021.9639530
https://doi.org/10.1109/sensors47087.2021.9639530
Publikováno v:
2021 IEEE Sensors.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74cf87e9f05fd91cd91329cf66c5611b
https://doi.org/10.1109/sensors47087.2021.9639471
https://doi.org/10.1109/sensors47087.2021.9639471
Autor:
Sundar Babu Isukapati, Emaran Ashik, Marvin H. White, Tianshi Liu, Woongje Sung, Adam J. Morgan, Bongmook Lee, Anant K. Agarwal, Ayman Fayed, Hua Zhang
Publikováno v:
MWSCAS
This paper presents the SPICE modeling and circuit development of a SiC power integrated circuit (IC) technology that offers monolithic integration of high-voltage lateral n-type SiC power metal-oxide-semiconductor field-effect transistors (MOSFETs)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65fa67f417d2e04203c4c28c3859c10d
https://doi.org/10.1109/mwscas47672.2021.9531903
https://doi.org/10.1109/mwscas47672.2021.9531903
Publikováno v:
IEEE Transactions on Electron Devices. 66:539-545
We report the effects of lanthanum-rich layer thickness and forming gas anneal (FGA) conditions on mobility and threshold voltage ( ${V} _{{\text {T}}}$ ) instability of high-mobility 4H-SiC MOSFETs using lanthanum silicate (LaSiO x ) interface engin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b7272aee83988bfab623fd8adfb9afa
https://doi.org/10.1109/ted.2018.2875094
https://doi.org/10.1109/ted.2018.2875094