Zobrazeno 1 - 10
of 180
pro vyhledávání: '"Bongjin Simon, Mun"'
Autor:
Jeongjin Kim, Youngseok Yu, Tae Won Go, Jean-Jacques Gallet, Fabrice Bournel, Bongjin Simon Mun, Jeong Young Park
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-10 (2023)
Abstract Size- and shape-tailored copper (Cu) nanocrystals can offer vicinal planes for facile carbon dioxide (CO2) activation. Despite extensive reactivity benchmarks, a correlation between CO2 conversion and morphology structure has not yet been es
Externí odkaz:
https://doaj.org/article/24efa8620a034d5f9fb01ad55ee16847
Autor:
Dongwoo Kim, Hojoon Lim, Minsik Seo, Hyunsuk Shin, Kyungmin Kim, Moonjung Jung, Subin Jang, Byunghyun Chae, Buseung Park, Jungwoo Lee, Yongseok Choi, Ki-jeong Kim, Jeongjin Kim, Xiao Tong, Hunt, Adrian, Iradwikanari Waluyo, Bongjin Simon Mun
Publikováno v:
ACS Applied Materials & Interfaces; 7/31/2024, Vol. 16 Issue 29, p38679-38689, 11p
Autor:
Jeongjin Kim, Hyunwoo Ha, Won Hui Doh, Kohei Ueda, Kazuhiko Mase, Hiroshi Kondoh, Bongjin Simon Mun, Hyun You Kim, Jeong Young Park
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-9 (2020)
Direct observation of carbon dioxide dissociation provides an origin of catalytic conversion for industrial chemical reactions. Here, the authors reveal their molecular interactions on the rhodium catalyst at near-ambient pressure by interface scienc
Externí odkaz:
https://doaj.org/article/6d8ddf81f978415484a0a1e56e05b57c
Autor:
Youngseok Yu, Dongwoo Kim, Hojoon Lim, Geonhwa Kim, Yoobin E. Koh, Daehyun Kim, Kohei Ueda, Satoru Hiwasa, Kazuhiko Mase, Fabrice Bournel, Jean-Jacques Gallet, François Rochet, Ethan J. Crumlin, Philip N. Ross Jr., Hiroshi Kondoh, Do Young Noh, Bongjin Simon Mun
Publikováno v:
AIP Advances, Vol 9, Iss 1, Pp 015314-015314-8 (2019)
The surface chemical states of Pd(100) during CO oxidation were investigated using ambient pressure x-ray photoelectron spectroscopy and mass spectroscopy. Under the reactant ratio of CO/O2 = 0.1, i.e. an oxygen-rich reaction condition, the formation
Externí odkaz:
https://doaj.org/article/1facabf4972d43929b8e8bfe29ee2f90
Publikováno v:
Physics and High Technology. 31:4-7
In this report, the progress of Current Applied Physics (CAP) since its first publication in 2001 is investigated with statistical data. Publications, authors, and worldwide usage of CAP are considered as the statistical data. In addition, factors re
Autor:
Bongjin Simon Mun, Habin Kang, Minsik Seo, Moonjung Jung, Geonhwa Kim, Ki-Jeong Kim, Fabrice Bournel, Jean-Jacques Gallet
Publikováno v:
Current Applied Physics. 30:14-19
Valence band spectra of a polycrystalline Pt3Co alloy were measured with photon energies near Co L 3 absorption edge. On the absorption edge, Co L 3 M 4 , 5 M 4 , 5 Auger signals are superimposed on the valence band spectra. Prior to the absorption m
Autor:
Hyunjoong Kim, Ji Mun Yoo, Dong Young Chung, Yongseon Kim, Moonjung Jung, Megalamane S. Bootharaju, Jiheon Kim, Sagang Koo, Heejong Shin, Geumbi Na, Bongjin Simon Mun, Ja Hun Kwak, Yung-Eun Sung, Taeghwan Hyeon
Publikováno v:
ACS nano. 16(10)
Sustainable energy-conversion and chemical-production require catalysts with high activity, durability, and product-selectivity. Metal/oxide hybrid structure has been intensively investigated to achieve promising catalytic performance, especially in
Autor:
Jeong Young Park, Jeongjin Kim, Ki-Jeong Kim, Bongjin Simon Mun, Joong Il Jake Choi, Jae-Eun Kim
Publikováno v:
The Journal of Physical Chemistry C. 125:6909-6915
The relationship between nanoscale friction and the surrounding environment has long been a critical issue in the field of nanotribology. Here, we utilized ambient pressure–atomic force microscopy ...
Characterization of non-stoichiometric Ga2O3-x thin films grown by radio-frequency powder sputtering
Publikováno v:
Ceramics International. 47:3238-3243
We report the synthesis and characterization of non-stoichiometric Ga2O3-x thin films deposited on sapphire (0001) substrates by radio-frequency powder sputtering. The chemical and electronic states of the non-stoichiometric Ga2O3-x thin films were i