Zobrazeno 1 - 10
of 937
pro vyhledávání: '"Bongiorno C."'
Autor:
Calabretta, C., Scuderi, V., Bongiorno, C., Anzalone, R., Reitano, R., Cannizzaro, A., Mauceri, M., Crippa, D., Boninelli, S., La Via, F.
Publikováno v:
In Microelectronic Engineering 1 January 2024 283
Autor:
Fiorenza, P., Alessandrino, M., Carbone, B., Di Martino, C., Russo, A., Saggio, M., Venuto, C., Zanetti, E., Bongiorno, C., Giannazzo, F., Roccaforte, F.
Publikováno v:
Materials Science Forum 1004, (2020) 433-438
In this work, the origin of the dielectric breakdown of 4H-SiC power MOSFETs was studied at the nanoscale, analyzing devices that failed after extremely long (three months) of high temperature reverse bias (HTRB) stress. A one-to-one correspondence b
Externí odkaz:
http://arxiv.org/abs/2009.04846
Autor:
Fiorenza, P., Schilirò, E., Giannazzo, F., Bongiorno, C., Zielinski, M., La Via, F., Roccaforte, F.
Publikováno v:
Applied Surface Science 526 (2020) 146656
The dielectric breakdown (BD) of thermal oxide (SiO2) grown on cubic silicon carbide (3C-SiC) was investigated comparing the electrical behavior of macroscopic metal-oxidesemiconductor (MOS) capacitors with nanoscale current and capacitance mapping u
Externí odkaz:
http://arxiv.org/abs/2005.01290
Autor:
La Magna, A., Alberti, A., Barbagiovanni, E., Bongiorno, C., Cascio, M., Deretzis, I., La Via, F., Smecca, E.
Publikováno v:
Phys. Status Solidi A 2019, 216, 1800597
We present a stochastic simulation method designed to study at an atomic resolution the growth kinetics of compounds characterized by the sp3-type bonding symmetry. Formalization and implementation details are discussed for the particular case of the
Externí odkaz:
http://arxiv.org/abs/2001.07980
Autor:
Giannazzo, F., Greco, G., Di Franco, S., Fiorenza, P., Deretzis, I., La Magna, A., Bongiorno, C., Zimbone, M., La Via, F., Zielinski, M., Roccaforte, F.
Publikováno v:
Adv. Electron. Mater. 2019, 1901171
In spite of its great promises for energy efficient power conversion, the electronic quality of cubic silicon carbide (3C-SiC) on silicon is currently limited by the presence of a variety of extended defects in the heteroepitaxial material. However,
Externí odkaz:
http://arxiv.org/abs/1912.12326
Autor:
Rascunà, S., Badalà, P., Tringali, C., Bongiorno, C., Smecca, E., Alberti, A., Di Franco, S., Giannazzo, F., Greco, G., Roccaforte, F., Saggio, M.
Publikováno v:
Materials Science in Semiconductor Processing 97 (2019) 62-66
This work reports on the morphological and electrical properties of Ni-based back-side Ohmic contacts formed by laser annealing process for SiC power diodes. Nickel films, 100 nm thick, have been sputtered on the back-side of heavily doped 110 um 4H-
Externí odkaz:
http://arxiv.org/abs/1906.03089
Akademický článek
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Autor:
Bellocchi, G., Vivona, M., Bongiorno, C., Badalà, P., Bassi, A., Rascuna', S., Roccaforte, F.
Publikováno v:
In Solid State Electronics December 2021 186
Publikováno v:
PLOS ONE, 12 (4), e0175036, (2017)
We present an agent based model of the Air Traffic Management socio-technical complex system that aims at modeling the interactions between aircrafts and air traffic controllers at a tactical level. The core of the model is given by the conflict dete
Externí odkaz:
http://arxiv.org/abs/1609.08030
Publikováno v:
JATM, 58, 152-163, (2017)
Understanding the relation between planned and realized flight trajectories and the determinants of flight deviations is of great importance in air traffic management. In this paper we perform an in depth investigation of the statistical properties o
Externí odkaz:
http://arxiv.org/abs/1603.02859