Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Bonghyun Choi"'
Autor:
Chang-seok Kang, Ju-Hyung Kim, Jae Sung Sim, Jang-Hyun You, Won-Seong Lee, Sanghun Jeon, Jung-Dal Choi, Youngwoo Park, Byeong-In Choi, Jong-Sun Sel, Bonghyun Choi, Won-Seok Jeong, Chang-Hyun Lee, Sung-Il Chang, Jintaek Park, Yoo-Cheol Shin
Publikováno v:
2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design.
Charge trap flash (CTF) memory is one of the most promising technologies for the next generation NAND technology. Among various CTF memories, excellent manufacturability of TaN-Al2O3-Si3N4-SiO2-Si (TANOS) structure has been successfully developed by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1daf7eab51e37d646b951aa5ba8601e0
https://doi.org/10.1109/nvsmw.2008.40
https://doi.org/10.1109/nvsmw.2008.40
Autor:
C.Y. Chang, Wonsuk Cho, Tae-Hong Ha, Bonghyun Choi, Kinam Kim, Hoon Lim, Jai-kyun Park, Soon-Moon Jung, Hoosung Cho, Jae-Hun Jeong, Han-Byung Park, Byoungkeun Son, Young-Seop Rah
Publikováno v:
Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005..
For the first time, the 65nm high performance transistor technology and the highly compacted double stacked S/sup 3/ SRAM cell with a size of 25F/sup 2/, and 0.16/spl mu/m/sup 2/ has been combined for providing the high density and high density solut
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13e9b4699d38e9e611d6431ab3ac9e47
https://doi.org/10.1109/essder.2005.1546707
https://doi.org/10.1109/essder.2005.1546707
Autor:
C.Y. Chang, Bonghyun Choi, Hoosung Cho, Hoon Lim, Han-Byung Park, Byoungkeun Son, Jongho Yun, Wonsuk Cho, Tae-Hong Ha, Seung-Chul Lee, Young-Seop Rah, Jae-Hun Jeong, Jae-Hoon Jang, Kinam Kim, Jai-kyun Park, Soon-Moon Jung
Publikováno v:
Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..
In order to meet the great demands for higher density SRAM in all area of SRAM applications, the 25F/sup 2/S/sup 3/ (stacked single-crystal Si ) SRAM cell, which is a truly 3-dimensional device by stacking the load PMOS and the pass NMOS Tr. on the p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b43a830ec3802193ec30ae5cc91eb6bd
https://doi.org/10.1109/.2005.1469275
https://doi.org/10.1109/.2005.1469275
Autor:
Jae-Hoon Jang, Byung-Il Ryu, Hoosung Cho, Sung-Jin Kim, Kinam Kim, Jonghoon Na, Bonghyun Choi, Chadong Yeo, Yongha Kang, Dae-Gi Bae, Young-Chul Chang, Kun-Ho Kwak, Soon-Moon Jung, Jae-Hun Jeong, Hoon Lim, Jong-Hyuk Kim, Wonseok Cho
Publikováno v:
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..
For the first time, the highest density SRAM, such as 512M bit SRAM, is developed by implementing the smallest 25F/sup 2/S/sup 3/ SRAM cell technology, whose cell size is 0.16/spl mu/m/sup 2/, and area saving peripheral SSTFT (stacked single-crystal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7150ac74da5f9f23c1a9b566f0746441
https://doi.org/10.1109/iedm.2004.1419128
https://doi.org/10.1109/iedm.2004.1419128
Autor:
Bonghyun Choi, J.H. Moon, Hoon Lim, Kun-Ho Kwak, B.J. Hwang, Y.H. Kang, Wonseok Cho, Sungjee Kim, Jae-Hun Jeong, W.R. Jung, Chadong Yeo, Keunwoo Kim, Ji-Hoon Kim, Jonghoon Na, Soon Moon Jung, J.H. Jang
Publikováno v:
2004 IEEE International SOI Conference (IEEE Cat. No.04CH37573).
The PMOS SSTFT (stacked single-crystal thin film transistor) is developed for achieving the smallest SRAM cell size, such as 45F/sup 2/, and low power mobile applications with the single crystallization technology of the Si thin films on the insulato
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9a13996ad2fd56b30e4be5208f8d471
https://doi.org/10.1109/soi.2004.1391586
https://doi.org/10.1109/soi.2004.1391586
Autor:
Wonseok Cho, Kinam Kim, Jong-Hyuk Kim, Jae Hoon Jeong, Bonghyun Choi, Joo Young Kim, Jae-Joo Shim, Sunghyun Kwon, Soon-Moon Jung, Kun-Ho Kwak, Hoon Lim, Hoosung Cho, Changmin Hong, Jin-Ho Kim
Publikováno v:
Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b23c1f743d2fa187ad6c356ce7bb65b1
https://doi.org/10.7567/ssdm.2005.h-3-1
https://doi.org/10.7567/ssdm.2005.h-3-1
Autor:
Jae-Hun Jeong, Wonseok Cho, Kun-Ho Kwak, Hoon Lim, Bonghyun Choi, Jae-Hoon Jang, Byung-Jun Hwang, Jong-Hyuk Kim, Jaehwan Moon, Soon-Moon Jung, Kinam Kim
Publikováno v:
Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..
The smallest 25F/sup 2/ SRAM cell size of 0.16um/sup 2/ is realized by S/sup 3/ cell technology and SSTFT with 193nm ArF lithography process. The stacked single-crystal thin film is developed and used for the first time in the SRAM cell to make the S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18ae47dc5f0e0b4dbcb01ac6ab84d06c
https://doi.org/10.1109/vlsit.2004.1345495
https://doi.org/10.1109/vlsit.2004.1345495
Autor:
Hyun-Geun Byun, Hoon Lim, Bonghyun Choi, Ki-Joon Kim, Tae-Hong Ha, Ho-Jin Kim, Seung-jae Lee, Jin-Ho Kim, Kyeong-Tae Kim, Jong-Mil Youn
Publikováno v:
2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167).
The reliability of dual gate oxide has been investigated in terms of dual gate oxide and shallow trench isolation (STI) process parameters. The thick oxide constructed by the dual gate oxide process shows intrinsic inferior quality to single-step gro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20e3959e83ba7de0a9150974ca3978c6
https://doi.org/10.1109/relphy.2001.922880
https://doi.org/10.1109/relphy.2001.922880
Autor:
Hoon Lim, Soon-Moon Jung, Youngseop Rah, Taehong Ha, Hanbyung Park, Chulsoon Chang, Wonsuk Cho, Jaikyun Park, Byoungkeun Son, Jaehun Jeong, Hoosung Cho, Bonghyun Choi, Kinam Kim
Publikováno v:
Proceedings of 35th European Solid-State Device Research Conference, 2005 (ESSDERC 2005); 2005, p549-552, 4p
Autor:
Soon-Moon Jung, Hoon Lim, Wonseok Cho, Hoosung Cho, Chadong Yeo, Yongha Kang, Daegi Bae, Jonghoon Na, Kunho Kwak, Bonghyun Choi, Sungjin Kim, Jaehun Jeong, Youngchul Chang, Jaehoon Jang, Jonghyuk Kim, Kinam Kim, Byung-Il Ryu
Publikováno v:
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004; 2004, p265-268, 4p