Výsledky vyhledávání - "Bonggeun, Shong"

Akademický článek

Adsorption of dimethylaluminum isopropoxide (DMAI) on the Al2O3 surface: A machine-learning potential study

Autor: Miso Kim, Sehee Kim, Bonggeun Shong

Publikováno v: Journal of Science: Advanced Materials and Devices, Vol 9, Iss 3, Pp 100754- (2024)

Dimethylaluminum isopropoxide (DMAI) is attracting attention as an alternative precursor for atomic layer deposition (ALD) of aluminum oxide (Al2O3). However, the surface chemical reaction mechanisms of DMAI during ALD regarding its dimeric structure

Externí odkaz: https://doaj.org/article/3980f09f1de3432198be6b81f1558802

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Akademický článek

Formation of oxygen vacancy at surfaces of ZnO by trimethylaluminum

Autor: Hyobin Eom, Woojin Bae, Ju Young Sung, Ji Hyeon Choi, Kyun Seong Dae, Jae Hyuck Jang, Tae Joo Park, Sang Woon Lee, Bonggeun Shong

Publikováno v: APL Materials, Vol 12, Iss 3, Pp 031115-031115-8 (2024)

The two-dimensional electron gas (2DEG) is a group of electrons that can move freely in horizontal dimensions but are confined in the third direction. It has been reported that atomic layer deposition (ALD) of Al2O3 on various reducible n-type oxides

Externí odkaz: https://doaj.org/article/3a2dea0ba4b84e3589d096869fc6cdfb

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Akademický článek

Enhancement of Conformality of Silicon Nitride Thin Films by ABC‐Type Atomic Layer Deposition

Autor: Jiwon Kim, Changbong Yeon, Deok‐Hyun Cho, Jaesun Jung, Bonggeun Shong

Publikováno v: Advanced Electronic Materials, Vol 10, Iss 3, Pp n/a-n/a (2024)

Abstract Atomic layer deposition (ALD) is utilized for the fabrication of miniaturized electronic devices with nanometer‐scale features. However, the conventional ALD process on high‐aspect‐ratio (HAR) substrates often results in the deposition

Externí odkaz: https://doaj.org/article/9c811118807842028b3a2cb2d02e3d7c

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Akademický článek

Gradient area-selective deposition for seamless gap-filling in 3D nanostructures through surface chemical reactivity control

Autor: Chi Thang Nguyen, Eun-Hyoung Cho, Bonwook Gu, Sunghee Lee, Hae-Sung Kim, Jeongwoo Park, Neung-Kyung Yu, Sangwoo Shin, Bonggeun Shong, Jeong Yub Lee, Han-Bo-Ram Lee

Publikováno v: Nature Communications, Vol 13, Iss 1, Pp 1-10 (2022)

Integrating bottom-up and top-down fabrication techniques can overcome limits in nanofabrication. Here authors demonstrate an approach for area selective deposition using Ti as an inhibitor in the atomic layer deposition process to achieve controlled

Externí odkaz: https://doaj.org/article/171a10ef297d4e4a911dbd77a990b845

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Akademický článek

Publisher Correction: Gradient area-selective deposition for seamless gap-filling in 3D nanostructures through surface chemical reactivity control

Autor: Chi Thang Nguyen, Eun-Hyoung Cho, Bonwook Gu, Sunghee Lee, Hae-Sung Kim, Jeongwoo Park, Neung-Kyung Yu, Sangwoo Shin, Bonggeun Shong, Jeong Yub Lee, Han-Bo-Ram Lee

Publikováno v: Nature Communications, Vol 14, Iss 1, Pp 1-1 (2023)

Externí odkaz: https://doaj.org/article/53f42571871a4952ab2204de9adcf668

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Akademický článek

Chemical mechanism of formation of two-dimensional electron gas at the Al2O3/TiO2 interface by atomic layer deposition

Autor: Jeongwoo Park, Hyobin Eom, Seong Hwan Kim, Tae Jun Seok, Tae Joo Park, Sang Woon Lee, Bonggeun Shong

Publikováno v: Materials Today Advances, Vol 12, Iss , Pp 100195- (2021)

Two-dimensional electron gases (2DEGs) localized at oxide heterointerfaces can potentially be used in applications associated with the design of novel electronic device architectures. Recent studies have reported that atomic layer deposition (ALD) of

Externí odkaz: https://doaj.org/article/9bfadf3005aa462e9017f747f2c3be09

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