Zobrazeno 1 - 10
of 62
pro vyhledávání: '"Bong-Seo Kim"'
Autor:
Jae Ki Lee, Min-Wook Oh, Byungki Ryu, Ji Eun Lee, Bong-Seo Kim, Bok-Ki Min, Sung-Jae Joo, Hee-Woong Lee, Su-Dong Park
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
Abstract We report the enhanced thermoelectric properties of Ce-doped AgSbTe2 (AgSb1−xCexTe2) compounds. As the Ce contents increased, the proportion of heterophase Ag2Te in the AgSbTe2 gradually decreased, along with the size of the crystals. The
Externí odkaz:
https://doaj.org/article/cbc70153314e41f8a746ac35c10a35a3
Publikováno v:
Materials, Vol 13, Iss 14, p 3117 (2020)
Mg2Si is a promising eco-friendly thermoelectric material, and Ni is suited for electrical contact on it. In this study, Bi-doped Mg2Si ingots with Ni contacts were fabricated by co-sintering, and thermal stability was investigated by long-time (500
Externí odkaz:
https://doaj.org/article/2ed1f1504b8f45d4932bec6024d6563c
Publikováno v:
Korean Journal of Metals and Materials. 61:437-443
Mg3Sb2-based materials are very promising for thermoelectric applications at low temperatures, and are strong candidates to replace n-type Bi2Te3 for cooling and power generation. Substituting Sb atoms with chalcogen elements (S, Se, Te) is a typical
Publikováno v:
Korean Journal of Metals and Materials. 60:858-864
NbFeSb-based alloys are promising p-type half-Heusler materials with excellent thermoelectric performance, thermal stability, and naturally abundant constituent elements. Alloying and doping are powerful techniques for enhancing the thermoelectric pr
Publikováno v:
Korean Journal of Metals and Materials. 60:213-219
Half-Heusler (HH) thermoelectric materials are promising for mid- to high-temperature applications, and MNiSn (M = Ti, Zr, Hf) is a representative n-type HH alloy. In general, the M sites are mixed with isoelectronic elements Ti, Zr, and Hf, to lower
Publikováno v:
Korean Journal of Metals and Materials. 59:904-910
In this study, half-Heusler (HH) thermoelectric materials Nb0.8Hf0.2FeSb0.98Sn0.02 (p-type) and Hf0.25Zr0.25Ti0.5NiSn0.98Sb0.02 (n-type) were synthesized using induction melting and spark plasma sintering. For alloying, a conventional induction melti
Autor:
Inseon Oh, Soyoung Cho, Jae Sung Son, Seongheon Baek, Jung-Woo Yoo, Seungjun Choo, Seungki Jo, Bong-Seo Kim, Jae Yong Song, Fredrick Kim, Hyewon Jeong, Sun Hwa Park, Da Hwi Gu, Hyeong Woo Ban, Jin Sang Kim, Hosun Shin, Seung Hwae Heo, Seungwoo Song, Ji Eun Lee
Publikováno v:
ACS Applied Energy Materials. 2:4582-4589
The recent interest in wearable electronics suggests flexible thermoelectrics as candidates for the power supply. Herein, we report a solution process to fabricate flexible Sb2Te3 thermoelectric th...
Publikováno v:
Journal of Alloys and Compounds. 783:448-454
In general, Bi2Te3 and related alloys show the best thermoelectric performance at near-room temperature region below about 423 K, which is in some cases not high enough for waste heat recovery. In order to raise the operation temperature on the basis
Publikováno v:
Journal of Electronic Materials.
Hf-free ZrxTi1−xNiSn0.98Sb0.02 (x = 0.25, 0.5, 0.75) n-type half-Heusler (HH) thermoelectric materials were synthesized by a serial processing method including induction melting (IM), annealing, ball milling, and spark plasma sintering (SPS). For c
Publikováno v:
Materials
Materials, Vol 13, Iss 3117, p 3117 (2020)
Volume 13
Issue 14
Materials, Vol 13, Iss 3117, p 3117 (2020)
Volume 13
Issue 14
Mg2Si is a promising eco-friendly thermoelectric material, and Ni is suited for electrical contact on it. In this study, Bi-doped Mg2Si ingots with Ni contacts were fabricated by co-sintering, and thermal stability was investigated by long-time (500