Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Bong-Ryoul Choi"'
Autor:
Stephen Hsu, Byung-Il Choi, Bong-Ryoul Choi, Xiaofeng Liu, Howell Rafael C, Pil-Soo Kang, Keith Gronlund, Suk-Ju Lee, Sung-Woon Park, Jong-Du Kim, No-Young Chung, Ki-Ho Baik, Na-Rae Bang
Publikováno v:
SPIE Proceedings.
As patterns shrink to physical limits, advanced Resolution Enhancement Technologies (RET) encounter increasing challenges to ensure a manufacturable Pr ocess Window (PW). Moreover, due to the wide variety of pattern constructs for logic device layers
Autor:
Jinyoung Choi, Daejin Park, Donggyu Yim, Cheol-Kyun Kim, Hyoung-Soon Yune, Jaeseung Choi, Bong-Ryoul Choi
Publikováno v:
SPIE Proceedings.
Recently, the dramatic acceleration in dimensional shrink of DRAM memory devices has been observed. For sub 60 nm memory device, we suggest the following method of optical proximity correction (OPC) to enhance the critical dimension uniformity (CDU).
Autor:
Stefan Jank, Vlad Temchenko, Paul G Karakatsanis, Ramana Veerasingam, Rakesh Vallishayee, Christoph Dolainsky, Xiaojing Yang, Bong-Ryoul Choi, Youval Nehmadi, Moshe Poyastro
Publikováno v:
2006 IEEE International Symposium on Semiconductor Manufacturing.
Deploying OPC that is robust over the process window is becoming more and more challenging as geometries shrinki ii. This challenge has a major impact in time-to-market and yield of new products. This paper describes a litho simulator calibration flo
Autor:
S. Oberholzer, C. Hoffmann, Tatsushi Akazaki, Takis Kontos, Christian Schönenberger, Hideaki Takayanagi, A. E. Hansen, Wolfgang Belzig, Bong-Ryoul Choi
Publikováno v:
Physical Review B. 72
We have measured the conductance and shot-noise of superconductor-normal metal (S-N) junctions between a Niobium (Nb) film and a 2-dimensional electron gas (2DEG), formed in an InAs-based semiconductor heterostructure. Adjacent to the junction, the 2