Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Bong Jin Kuh"'
Autor:
Joo Hee Jeong, Seung Wan Seo, Dongseon Kim, Seong Hun Yoon, Seung Hee Lee, Bong Jin Kuh, Taikyu Kim, Jae Kyeong Jeong
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-9 (2024)
Abstract Oxide semiconductors have gained significant attention in electronic device industry due to their high potential for emerging thin-film transistor (TFT) applications. However, electrical contact properties such as specific contact resistivit
Externí odkaz:
https://doaj.org/article/b21fa79d06114a5982824e9f1f4feec3
Autor:
Sanghyun Jo, Hyangsook Lee, Duk-Hyun Choe, Jung-Hwa Kim, Yun Seong Lee, Owoong Kwon, Seunggeol Nam, Yoonsang Park, Kihong Kim, Byeong Gyu Chae, Sangwook Kim, Seunghun Kang, Taehwan Moon, Hagyoul Bae, Jung Yeon Won, Dong-Jin Yun, Myoungho Jeong, Hyun Hwi Lee, Yeonchoo Cho, Kwang-Hee Lee, Hyun Jae Lee, Sangjun Lee, Kab-Jin Nam, Dongjin Jung, Bong Jin Kuh, Daewon Ha, Yongsung Kim, Seongjun Park, Yunseok Kim, Eunha Lee, Jinseong Heo
Publikováno v:
Nature Electronics. 6:390-397
Autor:
Jae Seok Hur, Min Jae Kim, Seong Hun Yoon, Hagyoung Choi, Chi Kwon Park, Seung Hee Lee, Min Hee Cho, Bong Jin Kuh, Jae Kyeong Jeong
Publikováno v:
ACS Applied Materials & Interfaces. 14:48857-48867
In this paper, the feasibility of an indium-gallium oxide (In
Design Guidelines of Thermally Stable Hafnia Ferroelectrics for the Fabrication of 3D Memory Devices
Autor:
Giuk Kim, Hunbeom Shin, Taehyong Eom, Minhyun Jung, Taeho Kim, Sangho Lee, Minki Kim, Yeongseok Jeong, Ji-Sung Kim, Kab-Jin Nam, Bong Jin Kuh, Sanghun Jeon
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Autor:
Ju Yong Park, Duk‐Hyun Choe, Dong Hyun Lee, Geun Taek Yu, Kun Yang, Se Hyun Kim, Geun Hyeong Park, Seung‐Geol Nam, Hyun Jae Lee, Sanghyun Jo, Bong Jin Kuh, Daewon Ha, Yongsung Kim, Jinseong Heo, Min Hyuk Park
Publikováno v:
Advanced materials (Deerfield Beach, Fla.).
Over the last few decades, the research on ferroelectric memories has been limited due to their dimensional scalability and incompatibility with complementary metal-oxide-semiconductor (CMOS) technology. The discovery of ferroelectricity in fluorite-
Autor:
Taikyu Kim, Cheol Hee Choi, Jae Seok Hur, Daewon Ha, Bong Jin Kuh, Yongsung Kim, Min Hee Cho, Sangwook Kim, Jae Kyeong Jeong
Publikováno v:
Advanced Materials. :2204663
As Si has faced physical limits on further scaling down, novel semiconducting materials such as 2D transition metal dichalcogenides and oxide semiconductors (OS) have gained tremendous attention to continue the ever-demanding downscaling represented
Autor:
Yewon Kim, Kwonyoung Kim, Okhyeon Kim, Chang Yup Park, Dong Geon Koo, Dong-Ho Ahn, Bong Jin Kuh, Won-Jun Lee
Publikováno v:
Journal of Materials Chemistry C. 10:11811-11811
Correction for ‘Composition control of conformal crystalline GeSbTe films by atomic layer deposition supercycles and tellurization annealing’ by Yewon Kim et al., J. Mater. Chem. C, 2022, 10, 9691–9698, DOI: https://doi.org/10.1039/D2TC00784C.
Publikováno v:
Ferroelectrics. 271:75-80
The (1 m x )Pb(Sc 1/2 Nb 1/2 )O 3 m x PbTiO 3 (x=0.4, PSNT(60/40)) thin films near the morphotropic phase boundary(MPB) composition were successfully deposited via sol-gel method. Taking the strict controls of processing factors such as the stable an
Publikováno v:
Ferroelectrics. 223:187-193
The phase transition behavior of the pseudobinary (1-x)Pb(Yb1/2 Nb1/2)O3-xPb(Fe1/2 Nb1/2)O3 [PYN-PFN] system has been investigated by X-ray diffraction and dielectric measurements. As the PFN content increases, the transition behavior changes from pa
Publikováno v:
Japanese Journal of Applied Physics. 41:6765-6767
Relaxor Pb(Sc1/2Nb1/2)O-3 (PSN) thin films without pyrochlore phase were processed from the modified alkoxide solution precursors. The preparation of single phase PSN thin films has a narrow processing window due to the appearance of an undesirable p