Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Bong Gyu Shin"'
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-12 (2023)
Abstract Quantum fluctuations of wavefunctions in disorder-driven quantum phase transitions (QPT) exhibit criticality, as evidenced by their multifractality and power law behavior. However, understanding the metal-insulator transition (MIT) as a cont
Externí odkaz:
https://doaj.org/article/1d0a9a39df3d4df7848c86db7b841275
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-11 (2023)
Abstract Strain is inevitable in two-dimensional (2D) materials, regardless of whether the film is suspended or supported. However, the direct measurement of strain response at the atomic scale is challenging due to the difficulties of maintaining bo
Externí odkaz:
https://doaj.org/article/95efb62adb35430199fd6d7b8f25f456
Publikováno v:
Physical Review Research, Vol 5, Iss 4, p 043029 (2023)
Our previous study observed the localization-delocalization transition and critical quantum fluctuations of the local density of states (LDOS) on the structurally disordered two-dimensional (2D) semiconductor MoS_{2}. This transition corresponds to t
Externí odkaz:
https://doaj.org/article/89a7107eae764ea2ae47d95a96b4b10e
Autor:
Seok Joon Yun, Gang Hee Han, Hyun Kim, Dinh Loc Duong, Bong Gyu Shin, Jiong Zhao, Quoc An Vu, Jubok Lee, Seung Mi Lee, Young Hee Lee
Publikováno v:
Nature Communications, Vol 8, Iss 1, Pp 1-10 (2017)
Two dimensional monolayer transition metal ditellurides and their alloys are interesting but their growth has been difficult. Herein, Yun et al. demonstrate the use of sodium salts to convert transition metal disulfide to ditelluride and alloys in te
Externí odkaz:
https://doaj.org/article/2ca3c56891b9412680b6a65dd002dd34
Autor:
Taehwan Jeong, Bong Gyu Shin, Young Jae Song, Jaewoo Shim, Jin-Hong Park, Sangwoo Park, Seong Jun Jung
Publikováno v:
Current Applied Physics. 19:224-229
Rhenium disulfide (ReS2) is regarded as a promising candidate for optoelectronic applications (e.g., infrared photodetector), as it maintains a direct bandgap regardless of the number of layers unlike other typical transition metal dichalcogenides. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e73ee434220162cfeb1c9b8870598768
https://doi.org/10.1016/j.cap.2018.07.017
https://doi.org/10.1016/j.cap.2018.07.017
Autor:
Dinh Loc Duong, Jiong Zhao, Gang Hee Han, Seok Joon Yun, Seung Mi Lee, Quoc An Vu, Jubok Lee, Bong Gyu Shin, Hyun You Kim, Young Hee Lee
Publikováno v:
Nature Communications, Vol 8, Iss 1, Pp 1-10 (2017)
Nature Communications
Nature Communications
The conversion of chalcogen atoms to other types in transition metal dichalcogenides has significant advantages for tuning bandgaps and constructing in-plane heterojunctions; however, difficulty arises from the conversion of sulfur or selenium to tel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fcde48e72ce92baeb36f862cdec52693
https://doaj.org/article/2ca3c56891b9412680b6a65dd002dd34
https://doaj.org/article/2ca3c56891b9412680b6a65dd002dd34
Autor:
Young Hee Lee, Young Jae Song, Minwoo Kim, Bong Gyu Shin, Sunam Jeon, Bumsub Song, Jun Sung Kim, Sangwoo Park, Eun Soo An, Dae Hwan Boo
Publikováno v:
ACS nano. 13(6)
Many scientific and engineering efforts have been made to realize graphene electronics by fully utilizing intrinsic properties of ideal graphene for last decades. The most technical huddles come from the absence of wafer-scale graphene with a single-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c0e5b8705ba56951f7e31047d9bfd0f0
https://pubmed.ncbi.nlm.nih.gov/31187979
https://pubmed.ncbi.nlm.nih.gov/31187979
Autor:
Yimo Han, Renjing Xu, Jing Kong, Bong Gyu Shin, Jihoon Park, Pin-Chun Shen, Donhee Ham, Nannan Mao, Soon Jung Jung, Haozhe Wang, Ang-Yu Lu, Klaus Kern
Publikováno v:
Small Methods. 5:2000720
The large-area synthesis of high-quality MoS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::230acc6c5575e24942054272f1b2a6a8
https://doi.org/10.1002/smtd.202000720
https://doi.org/10.1002/smtd.202000720
Autor:
Young-Kyu Han, Young-Min Kim, Jeong Won Jin, Hu Young Jeong, Ki Kang Kim, Ji Hoon Choi, Chang Seok Oh, Soo Min Kim, Young Hee Lee, Hayoung Ko, Hyung-Jin Kim, Yong In Kim, Stephen Boandoh, Soo Ho Choi, Gyeongtak Han, Bong Gyu Shin, Bumsub Song, Huong Thi Thanh Nguyen, Seok Joon Yun, Yo Seob Won, Byunghoon Lee, Hyun Je Cho
Publikováno v:
Advanced Materials. 33:2006601
Growth of 2D van der Waals layered single-crystal (SC) films is highly desired not only to manifest the intrinsic physical and chemical properties of materials, but also to enable the development of unprecedented devices for industrial applications.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b7b616445ef568f2d38e2cc7b3793c91
https://doi.org/10.1002/adma.202006601
https://doi.org/10.1002/adma.202006601
Autor:
Jung Jun Bae, Young Jae Song, Chong-Yun Park, Seok Joon Yun, Young Hee Lee, Gang Hee Han, Hye Min Oh, Bong Gyu Shin
Publikováno v:
Advanced Materials. 28:9378-9384
An unusually large bandgap modulation of 1.23-2.65 eV in monolayer MoS2 on a SiO2 /Si substrate is found due to the inherent local bending strain induced by the surface roughness of the substrate, reaching the direct-to-indirect bandgap transition. A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c74a679ce2d64d78de7b8d3e9b91aa3
https://doi.org/10.1002/adma.201602626
https://doi.org/10.1002/adma.201602626