Zobrazeno 1 - 10
of 156
pro vyhledávání: '"Bonchyk, A."'
Autor:
Kashchenko, Tetyana, Bonchyk, Viktoria
Publikováno v:
Argument. 13(13):163-181
Externí odkaz:
https://www.ceeol.com/search/article-detail?id=1026128
Autor:
Korotaev, A.G., Izhnin, I.I., Mynbaev, K.D., Voitsekhovskii, A.V., Nesmelov, S.N., Dzyadukh, S.M., Fitsych, O.I., Varavin, V.S., Dvoretsky, S.A., Mikhailov, N.N., Yakushev, M.V., Bonchyk, O.Yu., Savytskyy, H.V., Swiatek, Z., Morgiel, J.
Publikováno v:
In Surface & Coatings Technology 15 July 2020 393
Publikováno v:
Фізика і хімія твердого тіла, Vol 21, Iss 2, Pp 215-218 (2020)
Experimental studies of the features of the formation of laser-induced periodic nanostructures on the surface of silicon wafers in the zones of action of second, millisecond and nanosecond laser pulses are conducted in the work. The results of micros
Externí odkaz:
https://doaj.org/article/f00a9f76b6f44f188673991d6da0bb41
Autor:
Izhnin, I.I., Fitsych, O.I., Świątek, Z., Morgiel, Y., Bonchyk, O.Yu., Savytskyy, H.V., Mynbaev, K.D., Voitsekhovskii, A.V., Korotaev, A.G., Yakushev, M.V., Marin, D.V., Varavin, V.S., Dvoretsky, S.A.
Publikováno v:
In Opto-Electronics Review March 2019 27(1):14-17
Publikováno v:
Фізика і хімія твердого тіла, Vol 18, Iss 3, Pp 309-312 (2018)
The experimental studies of geometry features of silicon layers in areas of second and millisecond laser pulses were carried out. The results of microscopic studies of periodic structures that are formed on the surfaces with crystallographic orientat
Externí odkaz:
https://doaj.org/article/6c93534635324028b46a7a27472c893d
Autor:
Izhnin, I.I., Voitsekhovsky, A.V., Korotaev, A.G., Fitsych, O.I., Bonchyk, A.Yu., Savytskyy, H.V., Mynbaev, K.D., Varavin, V.S., Dvoretsky, S.A., Mikhailov, N.N., Yakushev, M.V., Jakiela, R.
Publikováno v:
In Infrared Physics and Technology March 2017 81:52-58
Autor:
Izhnin, I.I., Mynbaev, K.D., Voitsekhovsky, A.V., Korotaev, A.G., Varavin, V.S., Dvoretsky, S.A., Mikhailov, N.N., Yakushev, M.V., Bonchyk, A.Yu., Savytskyy, H.V., Fitsych, O.I.
Publikováno v:
In Infrared Physics and Technology November 2015 73:158-165
Publikováno v:
Archives of Metallurgy and Materials, Vol 61, Iss 1, Pp 115-122 (2016)
The paper presents the methods of obtaining photovoltaic structures based on CdXHg1-XTe graded-band-gap epitaxial layers. Barriers in these structures were formed by solid phase doping of the material with low-diffusing impurities (As). High-temperat
Externí odkaz:
https://doaj.org/article/7d3ac1e41bfb4c44b9b06e491af3f4cb
Autor:
A. V. Voitsekhovskii, H. V. Savytskyy, D. V. Marin, I. I. Izhnin, O. I. Fitsych, M. V. Yakushev, V. S. Varavin, Jerzy Morgiel, A. G. Korotaev, K. D. Mynbaev, O. Yu. Bonchyk, Z. Swiatek
Publikováno v:
Applied nanoscience. 2022. Vol. 12, № 3. P. 395-401
Bright–field and high-resolution transmission electron microscopy were used for nano-scale structural studies of defects induced by implantation of arsenic ions with 190 keV energy and 1014 cm–2 fluence in n and p-type Hg0.78Cd0.22Te films grown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::22174c5da87267785349a0b3f300e297
https://doi.org/10.1007/s13204-021-01704-y
https://doi.org/10.1007/s13204-021-01704-y
Autor:
A. G. Korotaev, Kurban Kurbanov, V. G. Remesnik, K. D. Mynbaev, Z. Świątek, S. A. Dvoretskii, A. V. Voitsekhovskii, M. V. Yakushev, Jerzy Morgiel, Nikolay N. Mikhailov, V. S. Varavin, H. V. Savytskyy, I. I. Izhnin, O. I. Fitsych, O. Yu. Bonchyk
Publikováno v:
Russian physics journal. 2020. Vol. 63, № 2. P. 290-295
By profiling the electrical parameters of the arsenic implanted CdHgTe films, grown by molecular beam epitaxy, and comparing the obtained data with the results of studies performed by secondary ion mass spectroscopy and transmission electron microsco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bc012d947cedb20e0389749c9091a105
https://doi.org/10.1007/s11182-020-02034-2
https://doi.org/10.1007/s11182-020-02034-2