Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Bon-jae Koo"'
Autor:
Na-Kyoung Yang, Yoo-Kyum Shin, Saeyoung Park, Sang-Min Kim, Bon-Jae Koo, Joonsoo Jeong, Min-Ho Seo
Publikováno v:
Micro and Nano Systems Letters, Vol 12, Iss 1, Pp 1-8 (2024)
Abstract Laser-induced graphene (LIG) is a three-dimensional graphene structure fabricated through the irradiation of a polymer substrate with laser energy (or fluence, equivalently). This methodology offers a cost-effective and facile means of produ
Externí odkaz:
https://doaj.org/article/77bf781e957b4c4f9b2675ec25f02081
Publikováno v:
Journal of the Korean Society of Radiology, Vol 85, Iss 6, Pp 1209-1214 (2024)
Cardiac rupture is a rare but fatal complication among patients undergoing cardiopulmonary resuscitation (CPR). Myocardial rupture can manifest as a discontinuity in the myocardial wall, communication between the ventricle or atrium and the pericar
Externí odkaz:
https://doaj.org/article/7a7b05d51c51435c9e69fc4eb5f742b3
Publikováno v:
International Journal of Smart Home. 8:197-204
Recently, the development of Machine to Machine (M2M) communication has been largely accomplished in a variety of fields including smart home. In M2M communication, the role of sensor node is only limited to gather data and send them to upper applica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fb2e86cbccdac1f4764c45b16950b6b
https://doi.org/10.14257/ijsh.2014.8.6.19
https://doi.org/10.14257/ijsh.2014.8.6.19
Autor:
Hiroshi Ishiwara, Bon Jae Koo
Publikováno v:
Integrated Ferroelectrics. 56:1055-1064
A gate-connected 1T2C-type ferroelectric memory, in which the bottom electrodes of paired ferroelectric capacitors are connected to the gate electrode of an underlying FET (field effect transistor) on the field oxide region, was fabricated using a Bi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ffe85f6329846a7643c0fc73d645f38
https://doi.org/10.1080/714040759
https://doi.org/10.1080/714040759
Autor:
Bon Jae Koo, Hiroshi Ishiwara
Publikováno v:
Integrated Ferroelectrics. 56:1055-1064
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1a2b848d091d9b9ffbfa7b1ceac3ad3
https://doi.org/10.1080/10584580390259560
https://doi.org/10.1080/10584580390259560
Publikováno v:
The 18th IEEE International Symposium on Consumer Electronics (ISCE 2014).
In this paper, we have presented a mathematical modelling of a context-aware system used in smart home based on Boolean control networks. This modelling describes the relationship between the context elements and services, which is effective to logic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe6daf1bd23a2d8d83ad52601eccc917
https://doi.org/10.1109/isce.2014.6884406
https://doi.org/10.1109/isce.2014.6884406
Publikováno v:
2012 IEEE Long Island Systems, Applications and Technology Conference (LISAT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::911335ee3a6c865035a8b7ccb136d2c5
https://doi.org/10.1109/lisat.2012.6223202
https://doi.org/10.1109/lisat.2012.6223202
Autor:
Hong-Bae Park, Kinam Kim, Dong-won Shin, Sang-In Lee, Jinwoo Lee, Sung-Yung Lee, Yoo-Sang Hwang, Jong-Gil Lee, Dong-Jin Jung, Bon-jae Koo, Soo-Ho Shin, Yoon-Soo Chun, Mi-Hyang Lee
Publikováno v:
1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216).
A reliable 1T/1C ferroelectric RAM has been successfully fabricated with 1.2 /spl mu/m conventional CMOS technology by adopting IrO/sub 2/ electrode and the Ti-rich PZT thin film. The Ti-rich PZT capacitor shows no degradation of sensing Pr after int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5534c83ec3731cd34c8e125536a98ba
https://doi.org/10.1109/vlsit.1998.689225
https://doi.org/10.1109/vlsit.1998.689225
Autor:
Sung-Yung Lee, Nak-Won Jang, Soon-oh Park, Hyunho Kim, Bon-jae Koo, Dong-Jin Jung, Kinam Kim, Yoon-Jong Song, Yungwook Park
Publikováno v:
International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).
A novel Ir/IrO/sub 2//Pt-PZT-Pt/IrO/sub 2//Ir capacitor is proposed for a highly reliable mega-scale FRAM. It was observed that charge degradation in retention test depends on the condition of the interface between top electrode and PZT thin film in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37775977543296a8a5c12adf5c006929
https://doi.org/10.1109/iedm.2000.904439
https://doi.org/10.1109/iedm.2000.904439
Autor:
Mi-Hyang Lee, N.J. Kang, Jinwoo Lee, Kinam Kim, Yoo-Sang Hwang, Yoon-Soo Chun, Sung-Yung Lee, Sang-eun Lee, Dong-won Shin, Bon-jae Koo, Soo-Ho Shin, Byung-Hee Kim, Dong-Jin Jung
Publikováno v:
Extended Abstracts of the 1997 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3544243e377dddda2a26a5b81661726
https://doi.org/10.7567/ssdm.1997.b-1-3
https://doi.org/10.7567/ssdm.1997.b-1-3