Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Bon Young Koo"'
Publikováno v:
Korean Journal of Legal Medicine. 44:76-83
Autor:
Bon-young Koo
Publikováno v:
Journal of Communication Design. 69:87-98
Autor:
Jae Hyun Kim, Sunnu Shim, Bon-young Koo, Wonse Kim, Wookhyun Cho, Ki-Soo Lee, Gwang Wook Lee, Seongjun Cho, Seok-jun Won
Publikováno v:
Microelectronics Reliability. 114:113874
Failure Analysis (FA) on Fully Depleted Silicon on Insulator (FDSOI) device is challenging due to its unique structure with buried oxide layer. Typical failure analyses for the bulk device are not viable to isolate the fault location as the first ste
Publikováno v:
Journal of the Korean earth science society. 35:131-146
Multi-beam echosounder data and grain size analysis data of surface sediment were acquired and analyzed in order to investigate the shelf-to-slope morphology, geological character, and their geological controlling factors in the southwestern margin o
Publikováno v:
Journal of the Korean Society of Marine Engineering. 31:531-542
Simultaneous measurement technique for temperature and velocity fields near a heated solid body has been constructed. The measurement system consists of a 3 plate CCD color camera, a color image grabber, a lighting system, a host computer and a softw
Autor:
Bon-young Koo, Jae-Young Ahn, Sang-Ryol Yang, Sungkweon Baek, Si-Young Choi, Chang-Jin Kang, Ki-Hyun Hwang, Joo-Tae Moon
Publikováno v:
2010 IEEE International Memory Workshop.
We suggested the heterogeneously stacked oxide (HSO) for the future tunnel oxide of high density NAND flash memory. HSO has a structure of SiO 2 /a-Si/a-SiOx using the concept of tunnel barrier engineering. By employing HSO tunnel barrier, it was pos
Publikováno v:
2010 IEEE International Memory Workshop.
The improvement of device performances has been achieved successfully through OAO IPD EOT scaling, which shows that OAO IPD is applicable to sub-40nm devices which require aggressive scaling of IPD EOT. Charge loss of OAO IPD at high temperature is e
Autor:
Si-Young Choi, Sunjung Kim, Joon-Gon Lee, Seung Jae Baik, Bio Kim, Bon-young Koo, Joo-Tae Moon
Publikováno v:
2009 IEEE International Reliability Physics Symposium.
We investigated threshold voltage shifts after program pulse in charge trap flash memory by measuring drain current changes. We have found threshold voltage shifts can be characterized as a function of not only the materials of tunnel oxide, trap lay
Autor:
Joo-Tae Moon, U-In Chung, Dae Won Moon, Dong Chan Kim, Chul-Sung Kim, Yu-gyun Shin, Mann Ho Cho, Bon-young Koo, Sungkweon Baek, Kwun-Bum Chung, Ji-Hyun Kim, Jin-Hwa Heo, Young-Jin Noh
Publikováno v:
Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005..
We reduced the gate tunneling current by seven times and suppressed NBTI using plasma nitridation-induced re-oxidation (PIROX). In plasma nitrided gate oxynitride, the nitrogen concentration at the MOS interface is determined after plasma nitridation
Publikováno v:
Journal of Breast Cancer. 12:100
Purpose: This study was performed to find the adequate number of removed lymph nodes to achieve an acceptable false-negative rate when performing sentinel lymph node biopsy for breast cancer. Methods: A total of 179 sentinel node biopsies combined wi