Zobrazeno 1 - 10
of 152
pro vyhledávání: '"Bolze, D"'
Autor:
Lerch, W., Paul, S., Niess, J., McCoy, S., Gelpey, J., Cristiano, F., Severac, F., Fazzini, P., Martinez-Limia, A., Pichler, P., Kheyrandish, H., Bolze, D.
Publikováno v:
In Materials Science & Engineering B 2008 154:3-13
Autor:
Lerch, W., Paul, S., Niess, J., McCoy, S., Selinger, T., Gelpey, J., Cristiano, F., Severac, F., Gavelle, M., Boninelli, S., Pichler, P., Bolze, D.
Publikováno v:
In Materials Science & Engineering B 2005 124:24-31
Publikováno v:
In Microelectronic Engineering October 2004 76(1-4):311-317
Autor:
Winkler, W, Borngräber, J, Heinemann, B, Rücker, H, Barth, R, Bauer, J, Bolze, D, Drews, J, Ehwald, K.-E, Grabolla, T, Haak, U, Höppner, W, Knoll, D, Krüger, D, Kuck, B, Kurps, R, Marschmeyer, M, Richter, H, Schley, P, Schmidt, D, Scholz, R, Tillack, B, Wolansky, D, Wulf, H.-E, Yamamoto, Y, Zaumseil, P
Publikováno v:
In Applied Surface Science 2004 224(1):297-305
Autor:
Nyamhere, C., Cristiano, F., Olivie, F., Essa, Z., Bedel-Pereira, E., Bolze, D., Yamamoto, Y.
Publikováno v:
Journal of Applied Physics; May2013, Vol. 113 Issue 18, p184508, 7p, 2 Charts, 9 Graphs
Autor:
Koffel, S., Burenkov, A., Sekowski, M., Pichler, P., Giubertoni, D., Bersani, M., Knaipp, M., Wachmann, E., Schrems, M., Yamamoto, Y., Bolze, D.
One of the main issues for the simulation of MOS transistors is the correct prediction of threshold voltages that depend on the active doping profiles in the channel under the gate oxide. Simulating a power MOS process we encountered a situation in w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::3e15eedd40302d82e842a4bc31002017
https://publica.fraunhofer.de/handle/publica/235422
https://publica.fraunhofer.de/handle/publica/235422
Publikováno v:
2014 44th European Solid State Device Research Conference (ESSDERC); 2014, p401-404, 4p
Autor:
Scheit, A., Lenke, T., Bolze, D., Chiussi, S., Stefanov, S., Gonzalez, P., Schumann, T., Skorupa, W.
Publikováno v:
2014 20th International Conference on Ion Implantation Technology (IIT); 2014, p1-4, 4p
Autor:
Nyamhere, C., Cristiano, F., Olivie, F., Bedel-Pereira, E., Boucher, J., Essa, Z., Bolze, D., Yamamoto, Y.
Publikováno v:
AIP Conference Proceedings; Nov2012, Vol. 1496 Issue 1, p171-174, 4p
Publikováno v:
2009 17th International Conference on Advanced Thermal Processing of Semiconductors; 2009, p1-11, 11p