Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Boltovets, M. S."'
Autor:
Boltovets M. S., Borisenko A. G., Ivanov V. N., Fedorovich О. А., Krivutsa V. A., Polozov B. P.
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 5, Pp 45-48 (2009)
The results of research and optimization of 4НSiC p–i–n-diodes mesastructures manufacturing method are presented as well as analysis of current-voltage characteristics and switching characteristics of p–i–n-diodes in the 25—500°C temperat
Externí odkaz:
https://doaj.org/article/795bb620960243d2aca180b847ebf9a5
Autor:
Boltovets, M. S.1, Ivanov, V. M.1, Konakova, R. V.2 konakova@isp.kiev.ua, Kudryk, Ya. Ya.2, Milenin, V. V.2, Shynkarenko, V. V.2, Sheremet, V. M.2, Sveshnikov, Yu. N.3, Yavich, B. S.4
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2010, Vol. 13 Issue 4, p337-342. 6p. 1 Illustration.
Autor:
Romanets, P. M., Konakova, R. V., Boltovets, M. S., Basanets, V. V., Kudryk, Ya. Ya., Slipokurov, V. S.
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics; 2019, Vol. 22 Issue 1, p34-38, 5p
Autor:
Boltovets, M. S., Ivanov, V. N., Avksentyev, A. Yu, Belyaev, A. E., Borisenko, A. G., Fedorovitsh, O. A., Konakova, R. V., Kudryk, Ya Ya, Lytvyn, P. M., Milenin, V. V., Anatoly Sachenko, Sveschnikov, Yu N.
Publikováno v:
Scopus-Elsevier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::7cad9475384b70067ae5a7ce39ec7a75
http://www.scopus.com/inward/record.url?eid=2-s2.0-35148864759&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-35148864759&partnerID=MN8TOARS
