Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Bolotin, K. I."'
Autor:
Kovalchuk, S., Greben, K., Kumar, A., Pessel, S., Watanabe, K., Taniguchi, T., Christiansen, D., Selig, M., Knorr, A., Bolotin, K. I.
Excitons in bilayer transition metal dichalcogenides (2L-TMDs) are Coulomb-bound electron/hole pairs that can be viewed as broadly tunable analogs of atomic or molecular systems. Here, we study the properties of 2L-TMD excitons under strong electric
Externí odkaz:
http://arxiv.org/abs/2303.09931
Autor:
Yagodkin, D, Greben, K, Eljarrat, A, Kovalchuk, S, Ghorbani-Asl, M, Jain, M, Kretschmer, S, Severin, N, Rabe, J P, Krasheninnikov, A V, Koch, C T, Bolotin, K I
We demonstrate a new localized excitonic state in patterned monolayer 2D semiconductors. This state is not associated with lattice disorder but is extrinsic, i.e. results from external molecules on the material surface. The signature of an exciton as
Externí odkaz:
http://arxiv.org/abs/2105.13711
Autor:
Klots, A. R., Newaz, A. K. M., Wang, Bin, Prasai, D., Krzyzanowska, H., Caudel, D., Ghimire, N. J., Yan, J., Ivanov, B. L., Velizhanin, K. A., Burger, A., Mandrus, D. G., Tolk, N. H., Pantelides, S. T., Bolotin, K. I.
Publikováno v:
Scientific Reports 4, 6608, (2014)
The optical response of semiconducting monolayer transition-metal dichalcogenides (TMDCs) is dominated by strongly bound excitons that are stable even at room temperature. However, substrate-related effects such as screening and disorder in currently
Externí odkaz:
http://arxiv.org/abs/1403.6455
Autor:
Newaz, A. K. M., Prasai, D., Ziegler, J. I., Caudel, D., Robinson, S., Haglund Jr, R. F., Bolotin, K. I.
We investigate electrical gating of photoluminescence and optical absorption in monolayer molybdenum disulfide (MoS$_2$) configured in field effect transistor geometry. We observe an hundredfold increase in photoluminescence intensity and an increase
Externí odkaz:
http://arxiv.org/abs/1211.0341
Publikováno v:
Nano Letter (2012)
We explore the dependence of electrical transport in a graphene field effect transistor (GraFET) on the flow of the liquid within the immediate vicinity of that transistor. We find large and reproducible shifts in the charge neutrality point of GraFE
Externí odkaz:
http://arxiv.org/abs/1202.3382
Measurement of discrete energy-level spectra in individual chemically-synthesized gold nanoparticles
Publikováno v:
Nano Lett., 8 (12), 4506-4512 (2008)
We form single-electron transistors from individual chemically-synthesized gold nanoparticles, 5-15 nm in diameter, with monolayers of organic molecules serving as tunnel barriers. These devices allow us to measure the discrete electronic energy leve
Externí odkaz:
http://arxiv.org/abs/0809.0670
The resistivity of ultra-clean suspended graphene is strongly temperature dependent for 5K0.5*10^11 cm^-2, the res
Externí odkaz:
http://arxiv.org/abs/0805.1830
Autor:
Bolotin, K. I., Sikes, K. J., Jiang, Z., Klima, M., Fudenberg, G., Hone, J., Kim, P., Stormer, H. L.
Publikováno v:
Solid State Communications 146, 351-355 (2008)
We have achieved mobilities in excess of 200,000 cm^2/Vs at electron densities of ~2*10^11 cm^-2 by suspending single layer graphene. Suspension ~150 nm above a Si/SiO_2 gate electrode and electrical contacts to the graphene was achieved by a combina
Externí odkaz:
http://arxiv.org/abs/0802.2389
Publikováno v:
K.I. Bolotin et al, APL 84, 3154 (2004)
We have fabricated single-electron transistors from individual metal nanoparticles using a geometry that provides improved coupling between the particle and the gate electrode. This is accomplished by incorporating a nanoparticle into a gap created b
Externí odkaz:
http://arxiv.org/abs/cond-mat/0310594
Autor:
Bolotin, K. I., Vasiliev, M. A.
Publikováno v:
Phys.Lett. B479 (2000) 421-428
Generic solution of free equations for massless fields of an arbitrary spin in $AdS_4$ is built in terms of the star-product algebra with spinor generating elements. A class of "plane wave" solutions is described explicitly.
Comment: 12 pages, l
Comment: 12 pages, l
Externí odkaz:
http://arxiv.org/abs/hep-th/0001031