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Autor:
Robert Czernecki, Martin Albrecht, Rafal Jakiela, Tadek Suski, G. Franssen, Szymon Grzanka, Justyna Szeszko, Grzegorz Targowski, M. Kryśko, Elzbieta Litwin-Staszewska, Izabella Grzegory, Grzegorz Nowak, Ryszard Piotrzkowski, Bolek Łucznik, Piotr Perlin, Mike Leszczynski
Publikováno v:
physica status solidi (a). 206:1130-1134
We have studied the properties of InGaN layers and quantum wells grown on gallium nitride substrates with intentional surface misorientation with respect to its crystalline c-axis. Misorientation varied in the range from 0 up to 2 degree. The indium