Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Bokkyoung Park"'
Autor:
Min-Sang Kim, Sung Dae Suk, Keun Hwi Cho, Donggun Park, Kyoung Hwan Yeo, Jun Seo, Bokkyoung Park, Won-Seoung Lee, Dong-Won Kim, Suk-Kang Sung, Hyunjun Bae, Ji-Myoung Lee, Yun-Young Yeoh, Ming Li
Publikováno v:
2008 Symposium on VLSI Technology.
Gate-all-around (GAA) MOSFET with single silicon nanowire is fabricated and applied to SONOS memory as a cell transistor for NAND flash string. Driving current over 1 uA, which is sufficient to NAND string, is obtained with single nanowire of ~7 nm w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::162768ac866883b4374514f0ded97381
https://doi.org/10.1109/vlsit.2008.4588593
https://doi.org/10.1109/vlsit.2008.4588593
Autor:
Mong Sup Lee, Donggun Park, Ming Li, Bokkyoung Park, Seong-Kyu Yun, Kyoung Hwan Yeo, Keun Hwi Cho, Nammyun Cho, Duhyun Hwang, Sung Dae Suk, Ki-Ha Hong, Byung-Il Ryu, Dong-Won Kim, Kwan-Heum Lee, Yun-Young Yeoh
Publikováno v:
2006 International Electron Devices Meeting.
GAA TSNWFET with 15 nm gate length and 4 nm radius nanowires is demonstrated and shows excellent short channel immunity. p-TSNWFET shows high driving current of 1.94 mA/?m while n-TSNWFET shows on-current on-current on-current of 1.44 mA/?m. Merits o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a80262c9d7c0a75dca14e6648faac8c7
https://doi.org/10.1109/iedm.2006.346838
https://doi.org/10.1109/iedm.2006.346838
Autor:
Kyoung Hwan Yeo, Sung Dae Suk, Ming Li, Yun-young Yeoh, Keun Hwi Cho, Ki-Ha Hong, SeongKyu Yun, Mong Sup Lee, Nammyun Cho, Kwanheum Lee, Duhyun Hwang, Bokkyoung Park, Dong-Won Kim, Donggun Park, Byung-Il Ryu
Publikováno v:
2006 International Electron Devices Meeting; 2006, p1-4, 4p
Autor:
Kyoung Hwan Yeo, Keun Hwi Cho, Ming Li, Sung Dae Suk, Yun-young Yeoh, Min-Sang Kim, Hyunjun Bae, Ji-Myoung Lee, Suk-Kang Sung, Jun Seo, Bokkyoung Park, Dong-Won Kim, Donggun Park, Won-Seoung Lee
Publikováno v:
2008 Symposium on VLSI Technology; 2008, p138-139, 2p