Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Bojja Aditya Reddy"'
Autor:
Kaivan Karami, Aniket Dhongde, Huihua Cheng, Paul M. Reynolds, Bojja Aditya Reddy, Daniel Ritter, Chong Li, Edward Wasige, Stephen Thoms
Publikováno v:
Micro and Nano Engineering, Vol 19, Iss , Pp 100211- (2023)
We demonstrate the fabrication of sub-100 nm T-Gate structures using a single electron beam lithography exposure and a tri-layer resist stack - PMMA/LOR/CSAR. Recent developments in modelling resist development were used to design the process, in whi
Externí odkaz:
https://doaj.org/article/9424c6c05d4d4cf3a1c11b16f2c9bbf6
Autor:
Alberto F. Morpurgo, Bojja Aditya Reddy, Evgeniy Ponomarev, Nicolas Ubrig, Céline Barreteau, Ignacio Gutiérrez-Lezama, Enrico Giannini
Publikováno v:
Nano Letters
Nano Letters, American Chemical Society, 2019, 20 (2), pp.1322-1328. ⟨10.1021/acs.nanolett.9b04810⟩
Nano Letters, Vol. 20, No 2 (2020) pp. 1322-1328
Nano Letters, American Chemical Society, 2019, 20 (2), pp.1322-1328. ⟨10.1021/acs.nanolett.9b04810⟩
Nano Letters, Vol. 20, No 2 (2020) pp. 1322-1328
The assembly of suitably designed van der Waals (vdW) heterostructures represents a new approach to produce artificial systems with engineered electronic properties. Here, we apply this strategy to realize synthetic semimetals based on vdW interfaces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f30534208e2df67ce5066a1aafd9af2f
https://doi.org/10.1021/acs.nanolett.9b04810
https://doi.org/10.1021/acs.nanolett.9b04810
Publikováno v:
Nature nanotechnology. 13(6)
The ability to gate-induce superconductivity by electrostatic charge accumulation is a recent breakthrough in physics and nanoelectronics. With the exception of LaAlO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::0efc9c887486b8ece74875db96bdc7d8
https://pubmed.ncbi.nlm.nih.gov/31399720
https://pubmed.ncbi.nlm.nih.gov/31399720
Publikováno v:
2D Materials
2D materials, Vol. 3, No 4 (2016) P. 045016
2D materials, Vol. 3, No 4 (2016) P. 045016
It has been recently claimed that bulk crystals of transition metal dichalcogenide (TMD) ReS$_2$ are direct band gap semiconductors, which would make this material an ideal candidate, among all TMDs, for the realization of efficient opto-electronic d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c8d4b88326fd4d6cc6262f8e6493f97f
Publikováno v:
Nature Nanotechnology. 13:520-520
In the version of this Article originally published, an error during typesetting led to the curve in Fig. 2a being shifted to the right, and the curves in the inset of Fig. 2a being displaced. The figure has now been corrected in all versions of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::044fe1fb07e338a65f5e8bf547d2412c
https://doi.org/10.1038/s41565-018-0159-2
https://doi.org/10.1038/s41565-018-0159-2
Publikováno v:
Nature nanotechnology, Vol. 13, No 6 (2018) pp. 483-488
Nature Nanotechnology
Nature Nanotechnology
The ability to gate-induce superconductivity by electrostatic charge accumulation is a recent breakthrough in physics and nanoelectronics. With the exception of LaAlO3/SrTiO3 interfaces, experiments on gate-induced superconductors have been largely c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::179caa8f023bfd20c17f205a2846dd93
https://infoscience.epfl.ch/record/260241
https://infoscience.epfl.ch/record/260241
