Zobrazeno 1 - 10
of 77
pro vyhledávání: '"Bojarczuk, N. A."'
We have used Raman spectroscopy to study indium nitride thin films grown by molecular beam epitaxy on (111) silicon substrates at temperatures between 450 and 550 C. The Raman spectra show well defined peaks at 443, 475, 491, and 591 cm{-1}, which co
Externí odkaz:
http://arxiv.org/abs/cond-mat/9910266
Autor:
Narayanan, V., Paruchuri, V.K., Cartier, E., Linder, B.P., Bojarczuk, N., Guha, S., Brown, S.L., Wang, Y., Copel, M., Chen, T.C.
Publikováno v:
In Microelectronic Engineering 2007 84(9):1853-1856
Publikováno v:
Journal of Applied Physics; Aug2010, Vol. 108 Issue 2, p024105, 5p, 1 Diagram, 6 Graphs
Publikováno v:
Journal of Applied Physics; 4/1/2003, Vol. 93 Issue 7, p3912, 8p, 2 Black and White Photographs, 8 Graphs
Thermal activation energies of Mg in GaN:Mg measured by the Hall effect and admittance spectroscopy.
Autor:
Kim[a], D. J., Ryu, D. Y., Bojarczuk, N. A., Karasinski, J., Guha, S., Lee, S. H., Lee, J. H.
Publikováno v:
Journal of Applied Physics; 9/1/2000, Vol. 88 Issue 5, p2564, 6p, 1 Chart, 5 Graphs
Publikováno v:
Journal of Applied Physics; Mar1984, Vol. 55 Issue 6, p1581-1589, 9p
Autor:
Clevenger, L. A., Bojarczuk, N. A., Holloway, K., Harper, J. M. E., Cabral, C., Schad, R. G., Cardone, F., Stolt, L.
Publikováno v:
Journal of Applied Physics; 1/1/1993, Vol. 73 Issue 1, p300, 9p, 3 Black and White Photographs, 7 Graphs
Publikováno v:
Journal of Applied Physics; 7/1/2001, Vol. 90 Issue 1, p512, 3p, 2 Black and White Photographs, 2 Graphs
Publikováno v:
Journal of Applied Physics; Aug1977, Vol. 48 Issue 8, p3425-3427, 3p
Publikováno v:
Journal of Applied Physics; 10/15/1997, Vol. 82 Issue 8, p4126, 3p, 1 Black and White Photograph, 1 Diagram, 4 Graphs