Zobrazeno 1 - 10
of 71
pro vyhledávání: '"Boiko, I. I."'
Autor:
Boiko, I. I.
Piezoresistance of n-Si is considered with due regard for inter-valley drag. It is shown that inter-valley drag gains the piezocoefficient and diminishes the mobility. In the region of nondegenerate carriers the effect of drag increases when carrier
Externí odkaz:
http://arxiv.org/abs/1102.0191
Autor:
Boiko, I. I.
Hall-effect and magnetoresistivity of holes in silicon and germanium are considered with due regard for mutual drag of light and heavy band carriers. Search of contribution of this drag shows that this interaction has a sufficient and non-trivial inf
Externí odkaz:
http://arxiv.org/abs/1012.1731
Autor:
Boiko, I. I.
Conductivity of p-Si and p-Ge is considered for two band model with due regard for mutual drag of light and heavy holes. It is shown that for small and moderate temperatures this drag significantly diminishes drift velocity of light holes and, as res
Externí odkaz:
http://arxiv.org/abs/1011.4904
Autor:
Boiko, I. I.
Galvanomagnetic effects in graphene Magnetoresistivity and Hole-effect were theoretically investigated for neutral and gated graphene. It is shown that in neutral graphene Hall-effect is totally absent. In gated, exactly monopolar graphene effect of
Externí odkaz:
http://arxiv.org/abs/1011.4204
Autor:
Boiko, I. I.
Conductivity of monolayer and two-layer graphene is considered with due regard for mutual drag of band electrons and holes. Search of contribution of the drag in conductivity shows that this effect can sufficiently influence on mobility of carriers,
Externí odkaz:
http://arxiv.org/abs/1011.1105
Autor:
Boiko, I. I.1 igoroksanaboiko@gmail.com
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2021, Vol. 24 Issue 1, p34-42. 9p.
Autor:
Boiko, I. I.1
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2019, Vol. 22 Issue 2, p139-149. 11p.
Autor:
Boiko, I. I.1 igoroksanaboiko@gmail.com
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2018, Vol. 21 Issue 2, p114-124. 11p.
Autor:
Boiko, I. I.1 igoroksanaboiko@gmail.com
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2017, Vol. 20 Issue 4, p447-457. 11p.
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