Zobrazeno 1 - 10
of 50
pro vyhledávání: '"Bohumír Zaťko"'
Publikováno v:
Advances in Electrical and Electronic Engineering, Vol 4, Iss 2, Pp 75-78 (2005)
The study present the results of an experimental investigation focused on the inflence of guard-ring on detector charge collection. The tested detector is based on semi-insulating (SI) GaAs substrate with a base thinkness of 250 um, where the depleti
Externí odkaz:
https://doaj.org/article/b94cfba8caec4a78bc8d9d7d92b6a963
Autor:
Tibor Izsák, Gabriel Vanko, Milan Držík, Stephan Kasemann, Johann Zehetner, Marian Vojs, Bohumír Zaťko, Štěpán Potocký, Alexander Kromka
Publikováno v:
Proceedings, Vol 56, Iss 1, p 35 (2020)
We present technological issues in the deposition of diamond films on gallium nitride (GaN) membranes. Many wrinkles and thicker diamond layers were observed at the membrane center and poor quality diamond outside the membrane area. The deflection of
Externí odkaz:
https://doaj.org/article/aa7a3d3dbbbb4a1d952e89e56a5a896c
Publikováno v:
Materials Today: Proceedings. 53:293-298
A radiation hardness study of semi-insulating GaAs detectors against 5 MeV electrons is presented in this paper. The influence of cumulative dose in the range from 136 up to 2000 kGy on alpha-spectrometry of 241Am is evaluated for investigated detect
Autor:
Bohumír Zaťko, Ladislav Hrubčín, Pavol Boháček, Yurij Borisovič Gurov, Sergej Vladimirovič Rozov, Sergej Alexandrovič Evseev, Maxim Viktorovič Bulavin, Nikolaj Ivanovič Zamiatin, Yurij Andrejevič Kopylov, Mária Sekáčová, Eva Kováčová
Publikováno v:
AIP Conference Proceedings.
Publikováno v:
AIP Conference Proceedings.
Publikováno v:
High-Z Materials for X-ray Detection ISBN: 9783031209543
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::494c80dcecc81ac0f373bf035cb7c87a
https://doi.org/10.1007/978-3-031-20955-0_11
https://doi.org/10.1007/978-3-031-20955-0_11
Publikováno v:
AIP Conference Proceedings.
Publikováno v:
AIP Conference Proceedings.
Autor:
D. Kindl, Pavel Hubík, František Dubecký, Matúš Dubecký, Bohumír Zaťko, E. Gombia, V. Kolesár
Publikováno v:
Applied surface science 467-468 (2019): 1219–1225. doi:10.1016/j.apsusc.2018.10.164
info:cnr-pdr/source/autori:Dubecky F.; Zatko B.; Kolesar V.; Kindl D.; Hubik P.; Gombia E.; Dubecky M./titolo:Charge collection efficiency of Pt vs. Mg contacts on semi-insulating GaAs/doi:10.1016%2Fj.apsusc.2018.10.164/rivista:Applied surface science/anno:2019/pagina_da:1219/pagina_a:1225/intervallo_pagine:1219–1225/volume:467-468
info:cnr-pdr/source/autori:Dubecky F.; Zatko B.; Kolesar V.; Kindl D.; Hubik P.; Gombia E.; Dubecky M./titolo:Charge collection efficiency of Pt vs. Mg contacts on semi-insulating GaAs/doi:10.1016%2Fj.apsusc.2018.10.164/rivista:Applied surface science/anno:2019/pagina_da:1219/pagina_a:1225/intervallo_pagine:1219–1225/volume:467-468
A comparative study of diode structures based on semi-insulating (SI) GaAs with evaporated Mg vs. Pt contacts is presented. Electric field strength in the vicinity of the contacts is inferred from the detection of α-particles emitted from 241Am radi
Autor:
František Dubecký, Mária Sekáčová, Bohumír Zaťko, Zdenko Zápražný, Pavol Boháček, Dušan Korytár, Vladimir A. Skuratov, K. Sedlackova, J. Osvald, A. Sagatova, Vladimír Nečas, L. Hrubčín
Publikováno v:
Applied Surface Science. 461:276-280
In this work we have focused on characterization of the surface barrier detectors on high quality 4H-SiC epitaxial layer. The thickness of the layer was 70 μm and the diameter of circular Au/Ni Schottky contact was 2 mm. The forward and the reverse