Growth of GaN on nano-crystalline diamond substrates

Autor: van Dreumel, G.W.G., Buijnsters, J.G., Bohnen, T., ter Meulen, J.J., Hageman, P.R., van Enckevort, W.J.P., Vlieg, E.

Publikováno v: In Diamond & Related Materials 2009 18(5):1043-1047

HVPE of scandium nitride on 6H–SiC(0 0 0 1)

Autor: Edgar, J.H., Bohnen, T., Hageman, P.R.

Publikováno v: In Journal of Crystal Growth 2008 310(6):1075-1080

Influence of In on the surface morphology of HVPE grown GaN

Autor: Dam, C.E.C., Hageman, P.R., van Enckevort, W.J.P., Bohnen, T., Larsen, P.K.

Publikováno v: In Journal of Crystal Growth 2007 307(1):19-25

The nucleation of HCl and Cl2-based HVPE GaN on mis-oriented sapphire substrates

Autor: Bohnen, T., Dreumel, G.W.G. van, Weyher, J.L., Enckevort, W.J.P. van, Ashraf, H., De Jong, A.E.F., Hageman, P.R., Vlieg, E.

Publikováno v: Physica Status Solidi (C) Current Topics in Solid State Physics, 7, 1749-1755
Physica Status Solidi (C) Current Topics in Solid State Physics, 7, 7-8, pp. 1749-1755

Contains fulltext : 83857.pdf (Publisher’s version ) (Closed access) 7 p.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::cfbe479fa0c57f8b330b6895f8f2b97c
https://hdl.handle.net/2066/83857

Scandium aluminum nitride nanowires

Autor: Bohnen, T., van Dreumel, G.W.G., Hageman, P.R., Yazdi, G.R., Yakimova, R., Vlieg, Elias, Algra, R.E., Verheijen, M.A., Edgar, J.H., Greene, V.A.

Publikováno v: Scandium: compounds, productions and applications, 135-152
STARTPAGE=135;ENDPAGE=152;TITLE=Scandium

Scandium nitride (ScN) and aluminum nitride (AlN) are novel semiconducting materials with tremendous potential for optoelectronic applications. While AlN's bandgap lies in the UV at 6 eV, ScN's bandgap is around 2-2.4 eV. Combinations of these semico

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::83ce30937f98f03b4972ad0c4f04f53c
https://research.tue.nl/nl/publications/48850e07-3039-493e-95c9-86fa6b925a3c