Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Bogdan O. Kushnarev"'
Autor:
Nikita N. Yakovlev, Aleksei V. Almaev, Bogdan O. Kushnarev, Maksim G. Verkholetov, Maksim V. Poliakov, Mikhail M. Zinovev
Publikováno v:
Crystals, Vol 14, Iss 2, p 123 (2024)
Vertical Schottky barrier diodes based on an ion beam sputter (IBS)-deposited β-Ga2O3 film on a single-crystalline (2¯01) unintentionally doped (UID) β-Ga2O3 with a Ni contact were developed. To form ohmic Ti/Ni contacts, the IBS-Ga2O3/UID β-Ga2O
Externí odkaz:
https://doaj.org/article/21128d7b1a2948d884242d7f405f6f8e
Autor:
Aleksei V. Almaev, Nikita N. Yakovlev, Bogdan O. Kushnarev, Viktor V. Kopyev, Vadim A. Novikov, Mikhail M. Zinoviev, Nikolay N. Yudin, Sergey N. Podzivalov, Nadezhda N. Erzakova, Andrei V. Chikiryaka, Mikhail P. Shcheglov, Houssain Baalbaki, Alexey S. Olshukov
Publikováno v:
Coatings. 2022. Vol. 12, № 10. P. 1565 (1-17)
Coatings; Volume 12; Issue 10; Pages: 1565
Coatings; Volume 12; Issue 10; Pages: 1565
TiO2 films of 130 nm and 463 nm in thickness were deposited by ion beam sputter deposition (IBSD), followed by annealing at temperatures of 800 °C and 1000 °C. The effect of H2, CO, CO2, NO2, NO, CH4 and O2 on the electrically conductive properties
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e8535f0eaebc7f957c824f129d86733c
https://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000997770
https://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000997770
Autor:
Alexander Polyakov, Vladimir Nikolaev, Sergey Stepanov, Alexei Almaev, Alexei Pechnikov, Eugene Yakimov, Bogdan O Kushnarev, Ivan Shchemerov, Mikhail Scheglov, Alexey Chernykh, Anton Vasilev, Anastasia Kochkova, Lyubov Guzilova, Stephen J Pearton
Publikováno v:
Journal of physics D: Applied physics. 2022. Vol. 55, № 49. P. 495102
Heavily Sn-doped films of α-Ga2O3 were grown by halide vapor phase epitaxy (HVPE) on basal plane c-sapphire and on (10-12) r-sapphire substrates with and without α-Cr2O3 thin buffers prepared by magnetron sputtering and annealing in air at 500 °C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::df3e101c3b2b175ae99e72789ac0c8be
https://doi.org/10.1088/1361-6463/ac962f
https://doi.org/10.1088/1361-6463/ac962f
Autor:
Alexander Polyakov, Vladimir Nikolaev, Sergey Stepanov, Alexei Almaev, Alexei Pechnikov, Eugene Yakimov, Bogdan O. Kushnarev, Ivan Shchemerov, Mikhail Scheglov, Alexey Chernykh, Anton Vasilev, Anastasia Kochkova, Stephen J. Pearton
Publikováno v:
Journal of applied physics. 2022. Vol. 131, № 21. P. 215701-1-215701-8
We report on growth and electrical properties of α-Ga2O3 films prepared by halide vapor phase epitaxy (HVPE) at 500 °C on α-Cr2O3 buffers predeposited on sapphire by magnetron sputtering. The α-Cr2O3 buffers showed a wide microcathodoluminescence
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1e9b29a375b3127100098c7feadd571f
https://doi.org/10.1063/5.0090832
https://doi.org/10.1063/5.0090832