Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Boehme, D. R."'
A study of donor electron spins and spin--dependent electronic transitions involving phosphorous ($^{31}$P) atoms in proximity of the (111) oriented crystalline silicon (c-Si) to silicon dioxide (SiO$_{2}$) interface is presented for [$^{31}$P] = 10$
Externí odkaz:
http://arxiv.org/abs/0905.0416
Autor:
Friedmann, T. A., Mirkarimi, P. B., Medlin, D. L., McCarty, K. F., Klaus, E. J., Boehme, D. R., Johnsen, H. A., Mills, M. J., Ottesen, D. K., Barbour, J. C.
Publikováno v:
Journal of Applied Physics; 9/1/1994, Vol. 76 Issue 5, p3088, 14p, 1 Diagram, 3 Charts, 13 Graphs
Autor:
Griffiths, S K, Losey, M W, Hachman, J T, Skala, D M, Hunter, L L, Yang, N Y C, Boehme, D R, Korellis, J S, Aigeldinger, G, Lu, W Y, Kelly, J J, Hekmaty, M A, McLean, D E, Yang, P C Y, Hauck, C A, Friedmann, T A
Publikováno v:
Journal of Micromechanics and Microengineering; September 2005, Vol. 15 Issue: 9 p1700-1712, 13p
Nucleation and Growth of Cubic Boron Nitride Films Produced by Ion-Assisted Pulsed Laser Deposition.
Autor:
Friedmann, T. A., Medlin, D. L., Mirkarimi, P. B., McCarty, K. F., Klaus, E. J., Boehme, D. R., Johnsen, H. A., Mills, M. J., Ottesen, D. K., Barbour, J. C.
Publikováno v:
MRS Online Proceedings Library; 01/19/1993, Vol. 316, pN.PAG-1, 1p
Publikováno v:
ChemInform; Aug1989, Vol. 20 Issue 33, pno-no, 1p