Zobrazeno 1 - 10
of 79
pro vyhledávání: '"Bocquel J"'
Autor:
Clua-Provost, T., Mu, Z., Durand, A., Schrader, C., Happacher, J., Bocquel, J., Maletinsky, P., Fraunié, J., Marie, X., Robert, C., Seine, G., Janzen, E., Edgar, J. H., Gil, B., Cassabois, G., Jacques, V.
The negatively-charged boron vacancy (V$_\text{B}^-$) center in hexagonal boron nitride (hBN) is currently garnering considerable attention for the design of two-dimensional (2D) quantum sensing units. Such developments require a precise understandin
Externí odkaz:
http://arxiv.org/abs/2404.14155
Autor:
Voisin, B., Bocquel, J., Tankasala, A., Usman, M., Salfi, J., Rahman, R., Simmons, M. Y., Hollenberg, L. C. L., Rogge, S.
Publikováno v:
Nature Communications 11, 6124 (2020)
Tunneling is a fundamental quantum process with no classical equivalent, which can compete with Coulomb interactions to give rise to complex phenomena. Phosphorus dopants in silicon can be placed with atomic precision to address the different regimes
Externí odkaz:
http://arxiv.org/abs/2105.10931
Autor:
Salfi, J., Voisin, B., Tankasala, A., Bocquel, J., Usman, M., Simmons, M. Y., Hollenberg, L. C. L., Rahman, R., Rogge, S.
Publikováno v:
Phys. Rev. X 8, 031049 (2018)
Exchange coupling is a key ingredient for spin-based quantum technologies since it can be used to entangle spin qubits and create logical spin qubits. However, the influence of the electronic valley degree of freedom in silicon on exchange interactio
Externí odkaz:
http://arxiv.org/abs/1706.09261
Autor:
Saraiva, A. L., Salfi, J., Bocquel, J., Voisin, B., Rogge, S., Capaz, Rodrigo B., Calderón, M. J., Koiller, Belita
Publikováno v:
Phys. Rev. B 93, 045303 (2016)
The triumph of effective mass theory in describing the energy spectrum of dopants does not guarantee that the model wavefunctions will withstand an experimental test. Such wavefunctions have recently been probed by scanning tunneling spectroscopy, re
Externí odkaz:
http://arxiv.org/abs/1508.02772
We report a reversible and hysteretic change in the topography measured with a scanning tunneling microscope near a single Fe dopant in a GaAs surface when a small positive bias voltage is applied. First-principles calculations of the formation energ
Externí odkaz:
http://arxiv.org/abs/1505.03816
Autor:
Ha, N., Mano, T., Chou, Y. L., Wu, Y. N., Cheng, S. J., Bocquel, J., Koenraad, P. M., Ohtake, A., Sakuma, Y., Sakoda, K., Kuroda, T.
Publikováno v:
Phys. Rev. B 92, 075306 (2015)
Making use of droplet epitaxy, we systematically controlled the height of self-assembled GaAs quantum dots by more than one order of magnitude. The photoluminescence spectra of single quantum dots revealed the strong dependence of the spectral linewi
Externí odkaz:
http://arxiv.org/abs/1504.02239
We present an atomically resolved study of metal-organic vapor epitaxy grown Mn doped InSb that is ferromagnetic at room-temperature. Both topographic and spectroscopic measurements have been performed by cross-sectional scanning tunneling microscopy
Externí odkaz:
http://arxiv.org/abs/1503.06825
Publikováno v:
Phys. Rev. B 96, 075207 (2017)
We report the direct observation of two mid-gap core d-states of differing symmetry for a single Fe atom embedded in GaAs. These states are distinguished by the strength of their hybridization with the surrounding host electronic structure. The mid-g
Externí odkaz:
http://arxiv.org/abs/1501.07112
The ability to control single dopants in solid-state devices has opened the way towards reliable quantum computation schemes. In this perspective it is essential to understand the impact of interfaces and electric fields, inherent to address coherent
Externí odkaz:
http://arxiv.org/abs/1501.05042
The incorporation of Fe in GaAs was studied by cross-sectional scanning tunneling microscopy (X-STM). The observed local electronic contrast of a single Fe atom is found to depend strongly on its charge state. We demonstrate that an applied tip volta
Externí odkaz:
http://arxiv.org/abs/1203.6293