Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Bochang Li"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 269-273 (2023)
The in-memory logic computing has been intensively studied as being considered as an important scenario to address the power-consumption issue posed by modern computers based on the von Neumann architecture. However, the realization of in-memory logi
Externí odkaz:
https://doaj.org/article/e91417a1146545deb0313a8565012f82
Publikováno v:
npj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-10 (2021)
Abstract State-of-the-art memristors are mostly formed by vertical metal–insulator–metal (MIM) structure, which rely on the formation of conductive filaments for resistive switching (RS). However, owing to the stochastic formation of filament, th
Externí odkaz:
https://doaj.org/article/cf214c11237f4ba4ab2322a3ed1c0b56
Autor:
Ning Liu, Jiuren Zhou, Yupeng Yao, Siying Zheng, Wenjing Feng, Mengkuo Cui, Bochang Li, Yan Liu, Yue Hao, Genquan Han
Publikováno v:
IEEE Electron Device Letters. 44:524-527
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4accd05f58405912d7ddd29ee2f0cdd6
https://doi.org/10.1109/led.2023.3235909
https://doi.org/10.1109/led.2023.3235909
Autor:
Siying Zheng, Jiuren Zhou, Ning Liu, Wenjing Feng, Yupeng Yao, Mengkuo Cui, Bochang Li, Jie Liang, Yan Liu, Yue Hao, Genquan Han
Publikováno v:
IEEE Electron Device Letters. 44:321-324
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b61f568851d1aa78a1c96e42830b8b72
https://doi.org/10.1109/led.2022.3229047
https://doi.org/10.1109/led.2022.3229047
Publikováno v:
IEEE Transactions on Electron Devices. 69:2038-2042
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fcdc3cfc2f78e3aa577dcf725257d98
https://doi.org/10.1109/ted.2022.3151044
https://doi.org/10.1109/ted.2022.3151044
Publikováno v:
ACS Applied Materials & Interfaces. 14:15370-15380
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56290a02a3c637513919c9119bd24012
https://doi.org/10.1021/acsami.1c24260
https://doi.org/10.1021/acsami.1c24260
Low Drift Reference-less ISFET Comprising Two Graphene Films with Different Engineered Sensitivities
Publikováno v:
ACS Applied Electronic Materials. 4:416-423
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::349c6e0c7eaa995906145d0ccce412f4
https://doi.org/10.1021/acsaelm.1c01066
https://doi.org/10.1021/acsaelm.1c01066
Publikováno v:
Nature Electronics. 4:348-356
The implementation of memristive synapses in neuromorphic computing is hindered by the limited reproducibility and high energy consumption of the switching behaviour of the devices. Typical filament-type memristors suffer, in particular, from tempora
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::570a58533c66349c4efe4a8b8dcc4817
https://doi.org/10.1038/s41928-021-00573-1
https://doi.org/10.1038/s41928-021-00573-1
Publikováno v:
International Journal of Hydrogen Energy. 46:16232-16240
For a hydrogen sensor based on organic thin-film transistor (OTFT) with palladium (Pd) source/drain (S/D) electrodes as the sensing medium, the effects of channel length on its sensing performance are investigated. When exposed to a fixed hydrogen co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::089b453342aeca7a66c75b4275034cea
https://doi.org/10.1016/j.ijhydene.2021.02.125
https://doi.org/10.1016/j.ijhydene.2021.02.125
Publikováno v:
IEEE Transactions on Electron Devices. 67:1776-1780
An organic thin-film transistor (OTFT)-based hydrogen sensor with palladium (Pd) source/drain (S/D) electrodes as the sensing medium is fabricated, and the effects of operating temperature on its sensing performance are investigated. The sensor exhib
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86814e816e543eb20c1b12a0a3371ce4
https://doi.org/10.1109/ted.2020.2973288
https://doi.org/10.1109/ted.2020.2973288