Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Bobby Logan Hancock"'
Publikováno v:
IEEE Transactions on Electron Devices. 62:1467-1472
Direct measurements of self-heating in gallium nitride (GaN) transistor using ultraviolet (UV) and visible micro-Raman spectroscopy are reported. The material stack was grown on silicon substrates and consists of an AlN nucleation, AlGaN transition,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8f9669d118dd17e8172c26193f30164
https://doi.org/10.1109/ted.2015.2414718
https://doi.org/10.1109/ted.2015.2414718
Publikováno v:
2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
Direct measurements are reported of self-heating in an AlGaN/GaN transistor using ultraviolet and visible micro-Raman. Device stack is comprised of silicon substrate, AlN nucleation, AlGaN transition, GaN buffer, and AlGaN barrier layers. Phonon shif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72552dabe2ce9bfbb32a1af8b62db2b2
https://doi.org/10.1109/csics.2015.7314522
https://doi.org/10.1109/csics.2015.7314522
Autor:
Sandeep Sohal, Olanrewaju S. Ogedengbe, Pathiraja A. R. D. Jayathilaka, T. H. Myers, Mark Holtz, Bobby Logan Hancock, M. Edirisooriya, Odille C. Noriega, E. G. LeBlanc, C. H. Swartz, Katherine Zaunbrecher
Publikováno v:
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC).
Intensity-resolved and time-resolved PL are shown to be powerful tools for analyzing recombination in epitaxial CdTe appropriate for photovoltaic applications. Non-radiative defects such as dislocations are easily mapped and quantified by confocal ph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4fdca550a7d214521ed78658b54e4e7
https://doi.org/10.1109/pvsc.2015.7356022
https://doi.org/10.1109/pvsc.2015.7356022
Impact of extended defects on recombination in CdTe heterostructures grown by molecular beam epitaxy
Autor:
E. G. LeBlanc, Darius Kuciauskas, Katherine Zaunbrecher, Sandeep Sohal, Olanrewaju S. Ogedengbe, Pathiraja A. R. D. Jayathilaka, C. H. Swartz, Teresa M. Barnes, T. H. Myers, Bobby Logan Hancock, Pat Dippo, M. Edirisooriya
Publikováno v:
Applied Physics Letters. 109:091904
Heterostructures with CdTe and CdTe1-xSex (x ∼ 0.01) absorbers between two wider-band-gap Cd1-xMgxTe barriers (x ∼ 0.25–0.3) were grown by molecular beam epitaxy to study carrier generation and recombination in bulk materials with passivated in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0216c73ba29ad8327c351c3d94d5771d
https://doi.org/10.1063/1.4961989
https://doi.org/10.1063/1.4961989
Autor:
Mark Holtz, Seajin Oh, Samuel Graham, Mohammad Nazari, Firooz Faili, Bobby Logan Hancock, Jonathan Anderson, Edwin L. Piner, Daniel J. Twitchen
Publikováno v:
Applied Physics Letters. 108:211901
Full-wafer stress mapping is accomplished using visible and ultraviolet (UV) micro-Raman spectroscopy of a 730-nm thick GaN layer integrated with diamond grown by chemical vapor deposition. The UV measurements taken from both sides of the wafer revea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8346d4c34bcf4a2c1d96a257f4317450
https://doi.org/10.1063/1.4952596
https://doi.org/10.1063/1.4952596
Autor:
Odille C. Noriega, Olanrewaju S. Ogedengbe, Pathiraja A. R. D. Jayathilaka, E. G. LeBlanc, Katherine Zaunbrecher, Mark Holtz, Bobby Logan Hancock, C. H. Swartz, M. Edirisooriya, T. H. Myers
Publikováno v:
Applied Physics Letters. 105:222107
Double heterostructures (DH) were produced consisting of a CdTe film between two wide band gap barriers of CdMgTe alloy. A combined method was developed to quantify radiative and non-radiative recombination rates by examining the dependence of photol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef1f816a939f2d77726f9eb270579d64
https://doi.org/10.1063/1.4902926
https://doi.org/10.1063/1.4902926
Autor:
Bobby Logan Hancock, Mark Holtz
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 32:061209
The junction temperature of InGaN/GaN MQW high-brightness light-emitting diodes is measured using an electrical method based on the dependence of diode forward voltage, Vf, on the junction temperature Tj. Electroluminescence (EL) data collected durin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94e401a3fbd2858ec4428f042046b0a1
https://doi.org/10.1116/1.4901411
https://doi.org/10.1116/1.4901411