Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Bob Turkot"'
Autor:
Adel Elsherbini, Kimin Jun, Richard Vreeland, William Brezinski, Haris Khan Niazi, Yi Shi, Qiang Yu, Zhiguo Qian, Jessica Xu, Shawna Liff, Johanna Swan, Jimin Yao, Pilin Liu, Christopher Pelto, Said Rami, Ajay Balankutty, Paul Fischer, Bob Turkot
Publikováno v:
2021 IEEE International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d4572e6e7b34e8b4950c24040f36fd8
https://doi.org/10.1109/iedm19574.2021.9720586
https://doi.org/10.1109/iedm19574.2021.9720586
Autor:
W. Rachmady, Phan Anh, G. Dewey, P. Nguyen, Matthew V. Metz, Tung I-Cheng, Patrick Morrow, Rajat Kanti Paul, Scott B. Clendenning, Nicole K. Thomas, A. A. Oni, Ryan Keech, Marko Radosavljevic, Huang Cheng-Ying, Alaan Urusa, Manan Mehta, Kang Jun Sung, A. Lilak, Mannebach Ehren, Hui Jae Yoo, Bob Turkot, Kabir Nafees, S. Vishwanath, K. L. Cheong, Richard E. Schenker, B. Krist, Michael K. Harper, Jack Portland Kavalieros
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
We demonstrate 3-D self-aligned stacked NMOS-on-PMOS multiple Si nanoribbon transistors with successful integration of vertically stacked dual source/drain EPI process and vertically stacked dual metal gate process. Both top NMOS and bottom PMOS show
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df2fecb4c1020f6a74997a8120152a6c
https://doi.org/10.1109/iedm13553.2020.9372066
https://doi.org/10.1109/iedm13553.2020.9372066
Publikováno v:
2017 IEEE International Electron Devices Meeting (IEDM).
Extreme Ultra-Violet (EUV) lithography, with its exposure wavelength of 13.5nm, offers a compelling alternative to 193nm-immersion lithography, improving imaging resolution and reducing a key contribution to Edge Placement Error (EPE). Recently, sign
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cae36df1a10595ed08a84944dc22e602
https://doi.org/10.1109/iedm.2017.8268390
https://doi.org/10.1109/iedm.2017.8268390
Autor:
James S. Clarke, Ramanan V. Chebiam, Seung Hoon Sung, Chris Jezewski, Bob Turkot, Hui Jae Yoo, Jasmeet S. Chawla, Colin T. Carver, Tronic Tristan A
Publikováno v:
2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM).
Assessing metal gap fill capability and electrical behavior in patterned features ahead of full integration is valuable in interconnect process development as feature sizes scale beyond the 14 nm technology node. In this work a simple device is fabri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1e366f73852d275b4cdf82017ba0177
https://doi.org/10.1109/iitc-mam.2015.7325633
https://doi.org/10.1109/iitc-mam.2015.7325633