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Autor:
Marwan H. Khater, Keith Macha, Bob Liedy, Renata Camillo-Castillo, John J. Pekarik, Philip V. Kaszuba, Qizhi Liu, Bjorn Zetterlund, Leon Moszkowicz, Peng Cheng, James W. Adkisson, Kurt A. Tallman, Peter B. Gray, David L. Harame
Publikováno v:
2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
In this paper, we discuss a novel technique to reduce base resistance (R b ) and collector-base capacitance (C cb ) for higher F max in high-speed SiGe HBTs. In order to reduce C cb , we first located the origins of the different components of C cb t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30d6c150efa618b96296cd6b8a710943
https://doi.org/10.1109/bctm.2012.6352616
https://doi.org/10.1109/bctm.2012.6352616
