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Autor:
Ningqi Zhu, Jason Pei, Erik Xiao, Haydn Zhou, Miao Bing, Seddy Chu, Xin Li, Jin Zhu, Bob Dong, Leeming Tu, Cynthia Li, Kevin Huang
Publikováno v:
Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV.
In recent years, the pursuit of high storage capacity in 3D-NAND flash devices has driven the addition of more layers to increase the stack height. Challenges arise when etching high aspect ratio memory holes. Due to the existence of a thick and opaq
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26b673bf0080e36de54257726bcf605c
https://doi.org/10.1117/12.2583760
https://doi.org/10.1117/12.2583760
