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Publikováno v:
SPIE Proceedings.
Magneto-resistive Random Access Memory (MRAM), considered the leading candidate for the next generation of universal memory, has moved from research to pilot production. Commercialization of the MRAM devices in mobile computing, cell phones, portable
Autor:
Gidi Gottlieb, Susan S. MacDonald, L. Jeff Myron, Greg P. Hughes, Liraz Gershtein, Kevin Rentzsch, Andrew Griffiths, Bob Burkhardt, David Mellenthin
Publikováno v:
SPIE Proceedings.
Lithography costs for IC production at resolutions of 65-nm and beyond have grown exponentially for each technology node and show no sign of slowing. Step and Flash Imprint Lithography (S-FIL), developed at the University of Texas (UT) uniquely offer